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BYW56-TR

P1-P3P4-P4
BYW52, BYW53, BYW54, BYW55, BYW56
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 04-Nov-15
1
Document Number: 86049
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
• Controlled avalanche characteristics
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• High surge current loading
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Rectification, general purpose
949539
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYW56 BYW56-TR 5000 per 10" tape and reel 25 000
BYW56 BYW56-TAP 5000 per ammopack 25 000
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYW52 V
R
= 200 V; I
F(AV)
= 2 A SOD-57
BYW53 V
R
= 400 V; I
F(AV)
= 2 A SOD-57
BYW54 V
R
= 600 V; I
F(AV)
= 2 A SOD-57
BYW55 V
R
= 800 V; I
F(AV)
= 2 A SOD-57
BYW56 V
R
= 1000 V; I
F(AV)
= 2 A SOD-57
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
BYW52 V
R
= V
RRM
200 V
BYW53 V
R
= V
RRM
400 V
BYW54 V
R
= V
RRM
600 V
BYW55 V
R
= V
RRM
800 V
BYW56 V
R
= V
RRM
1000 V
Peak forward surge current t
p
= 10 ms, half sine wave I
FSM
50 A
Repetitive peak forward current I
FRM
12 A
Average forward current = 180 ° I
F(AV)
2A
Pulse avalanche peak power t
p
= 20 μs half sine wave, T
j
= 175 °C P
R
1000 W
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
l
(BR)R
= 1 A, T
j
= 175 °C E
R
20 mJ
i
2
t-rating i
2
t8A
2
s
Junction and storage temperature range T
j
= T
stg
-55 to +175 °C
BYW52, BYW53, BYW54, BYW55, BYW56
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 04-Nov-15
2
Document Number: 86049
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 C, unless otherwise specified)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs.
Ambient Temperature
Fig. 4 - Reverse Current vs. Junction Temperature
MAXIMUM THERMAL RESISTANCE (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient
Lead length l = 10 mm, T
L
= constant R
thJA
45 K/W
On PC board with spacing 25 mm R
thJA
100 K/W
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 1 A V
F
-0.91 V
Reverse current
V
R
= V
RRM
I
R
-0.11μA
V
R
= V
RRM
, T
j
= 100 °C I
R
- 5 10 μA
Breakdown voltage I
R
= 100 μA, t
p
/T = 0.01, t
p
= 0.3 ms V
(BR)
- - 1600 V
Diode capacitance V
R
= 4 V, f = 1 MHz C
D
-18-pF
Reverse recovery time
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A t
rr
- - 4000 ns
I
F
= 1 A, dI/dt = 5 A/μs, V
R
= 50 V t
rr
- - 4000 ns
Reverse recovery charge l
F
= 1 A, dI/dt = 5 A/μs Q
rr
- - 200 nC
0
20
40
80
60
100
120
151050 202530
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
l - Lead Length (mm)
949101
ll
T
L
= constant
0.001
0.01
0.1
1
10
0.0 0.4 0.8 1.2 1.6
16350
V
F
- Forward Voltage (V)
I
F
- Forward Current (A)
T
j
= 25 °C
T
j
= 175 °C
0.0
0.5
1.0
1.5
2.0
2.5
0 20 40 60 80 100 120 140 160 180
16351
T
amb
- Ambient Temperature (°C)
I
FAV
- Average Forward Current (A)
R
thJA
= 45 K/W
l = 10 mm
R
thJA
= 100 K/W
PCB: d = 25 mm
V
R
= V
RRM
half sine wave
1
10
100
1000
25 50 75 100 125 150 175
16352
T
j
- Junction Temperature (°C)
I
R
- Reverse Current (μA)
V
R
= V
RRM
BYW52, BYW53, BYW54, BYW55, BYW56
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 04-Nov-15
3
Document Number: 86049
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
Fig. 7 - Thermal Response
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0
50
100
150
200
250
300
350
400
25 50 75 100 125 150 175
16353
T
j
- Junction Temperature (°C)
P
R
- Reverse Power Dissipation (mW)
V
R
= V
RRM
P
R
- Limit at 100 % V
R
P
R
- Limit at 80 % V
R
0
5
10
15
20
25
30
35
40
0.1 1 10 100
16354
V
R
- Reverse Voltage (V)
C
D
- Diode Capacitance (pF)
f = 1 MHz
1
10
100
1000
Z
thp
- Thermal Resistance
for Pulse Cond. (K/W)
t
p
- Pulse Length (s)
94 9178
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
I
FRM
- Repetitive Peak
Forward Current (A)
110
V
RRM
= 1000 V, R
thJA
= 100 K/W
t
p
/T = 0.5
t
p
/T = 0.2
t
p
/T = 0.1
t
p
/T = 0.05
t
p
/T = 0.02
t
p
/T = 0.01
T
amb
= 25 °C
T
amb
= 45 °C
T
amb
= 60 °C
T
amb
= 70 °C
T
amb
= 100 °C
20543
3.6 (0.142) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
0.82 (0.032) max.
P1-P3P4-P4

BYW56-TR

Mfr. #:
Buy BYW56-TR
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 2.0 Amp 1000 Volt 50 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
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