MAC997A8RL1G

© Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 3
1 Publication Order Number:
MAC997/D
MAC997 Series
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
any other light industrial or consumer application. Supplied in an
inexpensive TO92 package which is readily adaptable for use in
automatic insertion equipment.
OnePiece, InjectionMolded Package
Blocking Voltage to 600 Volts
Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all
possible Combinations of Trigger Sources, and especially for Circuits
that Source Gate Drives
All Diffused and Glassivated Junctions for Maximum Uniformity of
Parameters and Reliability
Improved Noise Immunity (dv/dt Minimum of 20 V/μsec at 110°C)
Commutating di/dt of 1.6 Amps/msec at 110°C
High Surge Current of 8 Amps
Device Marking: Device Type, e.g., for MAC997A6: MAC7A6, Date
Code
w These devices are available in Pbfree package(s). Specifications herein
apply to both standard and Pbfree devices. Please see our website at
www.onsemi.com for specific Pbfree orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off-State Voltage
(T
J
= 40 to +110°C)
(1)
Sine Wave 50 to 60 Hz, Gate Open
MAC997A6,B6
MAC997A8,B8
V
DRM,
V
RRM
400
600
Volts
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz
(T
C
= +50°C)
I
T(RMS)
0.8 Amp
Peak NonRepetitive Surge Current
One Full Cycle, Sine Wave 60 Hz
(T
C
= 110°C)
I
TSM
8.0 Amps
Circuit Fusing Considerations (t = 8.3 ms) I
2
t .26 A
2
s
Peak Gate Voltage
(t v 2.0 ms, T
C
= +80°C)
V
GM
5.0 Volts
Peak Gate Power
(t v 2.0 ms, T
C
= +80°C)
P
GM
5.0 Watts
Average Gate Power
(T
C
= 80°C, t v 8.3 ms)
P
G(AV)
0.1 Watt
Peak Gate Current
(t v 2.0 ms, T
C
= +80°C)
I
GM
1.0 Amp
Operating Junction Temperature Range T
J
40 to
+110
°C
Storage Temperature Range T
stg
40 to
+150
°C
TRIACS
0.8 AMPERE RMS
400 thru 600 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
MT1
G
MT2
TO92 (TO226AA)
CASE 029
STYLE 12
3
2
1
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 2
Main Terminal 1
MAC997 Series
http://onsemi.com
2
(1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θ
JC
75 °C/W
Thermal Resistance, Junction to Ambient R
θ
JA
200 °C/W
Maximum Lead Temperature for Soldering Purposes for 10 Seconds T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open) T
J
= 25°C
T
J
= +110°C
I
DRM
, I
RRM
10
100
μA
μA
ON CHARACTERISTICS
Peak OnState Voltage
(I
TM
= ".85 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)
V
TM
1.9 Volts
Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100 Ohms)
MT2(+), G(+) MAC997A6,A8
MT2(+), G()
MT2(), G()
MT2(), G(+)
MT2(+), G(+) MAC997B6,B8
MT2(+), G()
MT2(), G()
MT2(), G(+)
I
GT
5.0
5.0
5.0
7.0
3.0
3.0
3.0
5.0
mA
Latching Current (V
D
= 12 V, I
G
= 10 mA)
MT2(+), G(+) All Types
MT2(+), G() All Types
MT2(), G() All Types
MT2(), G(+) All Types
I
L
1.6
10.5
1.5
2.5
15
20
15
15
mA
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100 Ohms)
MT2(+), G(+) All Types
MT2(+), G() All Types
MT2(), G() All Types
MT2(), G(+) All Types
V
GT
.66
.77
.84
.88
2.0
2.0
2.0
2.5
Volts
Gate NonTrigger Voltage
(V
D
= 12 V, R
L
= 100 Ohms, T
J
= 110°C)
All Four Quadrants
V
GD
0.1 Volts
Holding Current
(V
D
= 12 Vdc, Initiating Current = 200 mA, Gate Open)
I
H
1.5 10 mA
Turn-On Time
(V
D
= Rated V
DRM
, I
TM
= 1.0 A pk, I
G
= 25 mA)
t
gt
2.0 μs
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(V
D
= 400 V, I
TM
= .84 A, Commutating dv/dt = 1.5 V/μs, Gate Open,
T
J
= 110°C, f = 250 Hz, with Snubber)
di/dt(c) 1.6 A/ms
Critical Rate of Rise of OffState Voltage
(V
D
= Rated V
DRM
, Exponential Waveform, Gate Open, T
J
= 110°C)
dv/dt 20 60 V/μs
Repetitive Critical Rate of Rise of OnState Current
Pulse Width = 20 μs, IPKmax = 15 A, diG/dt = 1 A/μs, f = 60 Hz
di/dt 10 A/μs
MAC997 Series
http://onsemi.com
3
+ Current
+ Voltage
V
TM
I
H
Symbol Parameter
V
DRM
Peak Repetitive Forward Off State Voltage
I
DRM
Peak Forward Blocking Current
V
RRM
Peak Repetitive Reverse Off State Voltage
I
RRM
Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
I
DRM
at V
DRM
on state
off state
I
RRM
at V
RRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2
V
TM
I
H
V
TM
Maximum On State Voltage
I
H
Holding Current
MT1
(+) I
GT
GATE
(+) MT2
REF
MT1
() I
GT
GATE
(+) MT2
REF
MT1
(+) I
GT
GATE
() MT2
REF
MT1
() I
GT
GATE
() MT2
REF
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III Quadrant IV
Quadrant II Quadrant I
Quadrant Definitions for a Triac
I
GT
+ I
GT
All polarities are referenced to MT1.
With inphase signals (using standard AC lines) quadrants I and III are used.

MAC997A8RL1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Triacs THY .8A 600V TRIAC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union