©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002
KSC5047
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 100 V
V
CEO
Collector-Emitter Voltage 50 V
V
EBO
Emitter-Base Voltage 15 V
I
C
Collector Current 15 A
I
B
Base Current 4 A
P
C
Collector Dissipation (T
C
=25°C) 100 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 50mA, I
B
= 0 50 V
I
CBO
Collector Cut-off Current V
CB
= 100V, I
E
= 0 100 µA
I
EBO
Emitter-Base Breakdown Voltage V
EB
= 15V, I
C
= 0 100 µA
h
FE
DC Current Gain V
CE
= 5V, I
C
= 5A 40
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 5A, I
B
= 0.12A 0.5 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 5A, I
B
= 0.12A 1.2 V
t
ON
Turn On Time V
CC
= 20V, I
C
= 5A
I
B1
= - I
B2
= 0.12A
R
L
= 4Ω
0.5 µs
t
STG
Storage Time 2.5 µs
t
F
Fall Time 0.5 µs
KSC5047
Feature
• High Current Gain
• Low Collector Emitter Saturation Voltage
TO-3P
1
1.Base 2.Collector 3.Emitter
