Data Sheet ADPD2212
Rev. 0 | Page 3 of 13
SPECIFICATIONS
V
CC
= 3.3 V, T
A
= 25°C, λ = 528 nm, unless otherwise noted. I
PD
is the photodiode current, I
MOD
is the modulation current, E
E
is
irradiance, I
OUT
is output current, V
BIAS
is the bias voltage, R
FEEDBACK
is the TIA feedback resistor, and R
LOAD
is the load resistance.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
GAIN
Gain (Current Amplifier) β
24
DYNAMIC PERFORMANCE
Frequency Response Peaking <6 dB
Rise Time t
10% to 90% full scale (FS) (I
OUT
= 24 µA) 1.24 µs
Fall Time t
90% to 10% FS (I
OUT
=24 µA) 1.27 µs
Bandwidth BW I
PD
= 10 nA, I
MOD
= 1 nA 400 kHz
OPTICAL PERFORMANCE
Diode Active Area 2.5 mm
2
Saturation Irradiance 1600 µW/cm
2
NOISE PERFORMANCE
Current Noise, Output Referred
1
E
E
= 0 µW/cm
2
1920 fA/√Hz
I
PD
= 10 nA to 300 nA 1.4 × N
SHOT
fA/√Hz
I
PD
> 300 nA 1.15 × N
SHOT
fA/√Hz
Current Noise Floor, Input Referred
E
E
= 0 µW/cm
2
, at 1 kHz
90
150
fA/√Hz
Noise Equivalent Power NEP At 1 kHz 100 fW/√Hz
E
E
Required for SNR = 10000:1 At 1 kHz 144 nW/cm
2
POWER AND SUPPLY
Supply Voltage V
1.8 3.3 5.0 V
Power Supply Rejection Ratio PSRR V
CC
= 1.8 V to 5.0 V, E
E
= 1600 µW/cm
2
120 nA/V
Current
Standby I
PWDN > V
IH
1 µA
Supply at E
E
= 0 µW/cm
2
I
137 µA
Supply
2
I
I
OUT
= 10 µA 166 µA
I
OUT
= 240 µA 857 µA
OUTPUT CHARACTERISTICS
Amplifier Static Bias Current
Input Referred E
E
= 0 µW/cm
2
10 nA
Output Referred E
E
= 0 µW/cm
2
240 nA
Maximum Output Voltage V
V
CC
0.75 V
Nominal Linear Output Current I
240 µA
Linearity into TIA V
BIAS
= 1.3 V, R
FEEDBACK
= 25 kΩ 60 dB
Linearity into Resistive Load I
OUT
< 100 µA , R
LOAD
= 5 kΩ 60 dB
Peak Output Current
3
300 µA
Output Capacitance C
From OUT to GND 5 pF
Output Resistance
R
From OUT to GND 1000
POWER-DOWN LOGIC
Input Voltage
High Level V
V
CC
0.2 V
Low Level
0.2
V
Leakage Current
High I
PWDN = 3.3 V 0.2 nA
Low I
PWDN = 0 V 8.5 µA
OPERATING AMBIENT TEMPERATURE RANGE 40 +85 °C
1
N
SHOT
refers to photon shot noise. Photon shot noise is the fundamental noise floor for all photodetectors in photoconductive mode.
2
I
SUPPLY
= I
FLOOR
+ (3 × I
OUT
).
3
Outputs greater than I
OUT_FS
may have degraded performance.
ADPD2212 Data Sheet
Rev. 0 | Page 4 of 13
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage (VCC) 6.0 V
Storage Temperature Range
40°C to +105°C
Junction Temperature 110°C
Solder Reflow Temperature (<10 sec) 260°C
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
θ
JA
is specified for the worst case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type θ
JA
θ
JC
Unit
3 mm × 4 mm LFCSP 66.62 11.46 °C/W
SOLDERING PROFILE
Figure 2 and Table 4 provide information about the recommended
soldering profile.
Figure 2. Recommended Soldering Profile
Table 4. Recommended Soldering Profile Limits
1
Profile Feature Condition (Pb Free)
Average Ramp Rate (T
L
to T
P
) 2°C/sec maximum
Preheat
Minimum Temperature (T
SMIN
) 150°C
Maximum Temperature (T
SMAX
) 200°C
Time from T
SMIN
to T
SMAX
(t
S
) 60 sec to 120 sec
Ramp-Up Rate (T
SMAX
to T
L
) 2°C/sec maximum
Liquidus Temperature (T
L
) 217°C
Time Maintained Above T
L
(t
L
) 60 sec to 150 sec
Peak Temperature (T
P
)
260°C + (0°C/−5°C)
Time Within 5°C of Actual T
P
(t
P
) 20 sec to 30 sec
Ramp-Down Rate 3°C/sec maximum
Time from 25°C (t25°C) to Peak
Temperature
8 minutes maximum
1
Based on JEDEC Standard J-STD-020D.1.
ESD CAUTION
t
P
t
L
t
25°C TO PEAK
t
S
PREHEAT
CRITICAL ZONE
T
L
TO T
P
TEMPERATURE
TIME
RAMP-DOWN
RAMP-UP
T
SMIN
T
SMAX
T
P
T
L
13721-022
Data Sheet ADPD2212
Rev. 0 | Page 5 of 13
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 3. Pin Configuration
Table 5. Pin Function Descriptions
Pin No. Mnemonic Description
1 PWDN Power-Down Input. Must be connected. Pull this pin high to disable the device.
2 VCC Supply Voltage.
3 NIC Not Internally Connected. This pin can be grounded.
4 OUT Output Terminal.
5 GND Ground.
6 NIC Not Internally Connected. This pin can be grounded.
7 NIC Not Internally Connected. This pin can be grounded.
8 NIC Not Internally Connected. This pin can be grounded.
9
NIC
Not Internally Connected. This pin can be grounded.
10 NIC Not Internally Connected. This pin can be grounded.
11 EPAD Exposed Pad. The exposed pad must be left floating. The printed circuit board (PCB) area under the exposed pad
can be left blank to facilitate this requirement.
ADPD2212
TOP VIEW
(Not to Scale)
NOTES
1. NIC = NOT INTERNALLY CONNECTED.
2. THE EXPOSED PAD MUST BE LEFT FLOATING.
THE PCB AREA UNDER THE EXPOSED PAD
CAN BE LEFT BLANK TO FACILITATE
THIS REQUIREMENT.
13721-003
1PWDN
2VCC
3NIC
4OUT
5GND
10 NIC
9 NIC
8 NIC
7 NIC
6 NIC
+

ADPD2212ACPZ-R7

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Photo IC Sensors Ultra-Low Noise Integr Int Sensor
Lifecycle:
New from this manufacturer.
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DHL FedEx Ups TNT EMS
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