AOWF11C60
Symbol Min Typ Max Units
600
700
BV
DSS
0.55
V/
o
C
1
10
I
GSS
Gate-Body leakage current
±100
nΑ
V
GS(th)
Gate Threshold Voltage
3 4 5 V
R
DS(ON)
0.36 0.44 Ω
g
FS
12 S
V
SD
0.7 1 V
I
S
Maximum Body-Diode Continuous Current 11 A
I
SM
80 A
C
iss
2000 pF
C
oss
84 pF
C
o(er)
60 pF
C
o(tr)
107 pF
C
rss
2.8 pF
R
g
3.5 Ω
Q
g
30 42 nC
Q
14 nC
Breakdown Voltage Temperature
Coefficient
Drain-Source Breakdown Voltage
I
D
=250µA, V
GS
=0V, T
J
=25°C
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=5.5A
I
D
=250µA, V
GS
=0V
Maximum Body-Diode Pulsed Current
C
Input Capacitance
Output Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=480V, I
D
=11A
Reverse Transfer Capacitance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
V
GS
=0V, V
DS
=0 to 480V, f=1MHz
Effective output capacitance, time
related
I
V
DS
=5V,
I
D
=250µA
V
DS
=480V, T
J
=125°C
V
DS
=0V, V
GS
=±30V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=600V, V
GS
=0V
µA
BV
DSS
V
I
D
=250µA, V
GS
=0V, T
J
=150°C
SWITCHING PARAMETERS
I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=5.5A
Forward Transconductance
Gate Source Charge
Diode Forward Voltage
Effective output capacitance, energy
related
H
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=100V, f=1MHz
V
GS
=0V, V
DS
=100V, f=1MHz
Q
gd
4 nC
t
D(on)
50 ns
t
r
50 ns
t
D(off)
70 ns
t
f
32 ns
t
rr
485
ns
Q
rr
7.2
µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
I
F
=11A,dI/dt=100A/µs,V
DS
=100V
Turn-On DelayTime
Turn-Off DelayTime
V
GS
=10V, V
DS
=300V, I
D
=11A,
R
G
=25Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=11A,dI/dt=100A/µs,V
DS
=100V
Turn-On Rise Time
Gate Drain Charge
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, I
AS
=5A, V
DD
=150V, R
G
=25Ω, Starting T
J
=25°C.
H. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
I. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
J. L=1.0mH, V
DD
=150V, R
G
=25Ω, Starting T
J
=25°C.
Rev.2.0: Auguest 2014 www.aosmd.com Page 2 of 6
