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PH2925U,115

P1-P3P4-P6P7-P9P10-P12P13-P13
PH2925U_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 24 February 2009 3 of 12
NXP Semiconductors
PH2925U
N-channel TrenchMOS ultra low level FET
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aaa631
0
40
80
120
0 50 100 150 200
T
mb
(
°
C)
I
der
(%)
T
mb
(°C)
0 20015050 100
03aa15
40
80
120
P
der
(%)
0
003aaa438
10
-1
1
10
10
2
10
3
10
-1
1 10 10
2
V
DS
(V)
I
D
(A)
DC
100 ms
10 ms
Limit R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10
μ
s
100
μ
s
PH2925U_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 24 February 2009 4 of 12
NXP Semiconductors
PH2925U
N-channel TrenchMOS ultra low level FET
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from
junction to mounting
base
see Figure 4 --2K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
003aaa439
10
-1
1
10
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Z
th(j-mb)
(K/W)
single pulse
0.2
0.1
0.05
δ
= 0.5
0.02
t
p
T
P
t
t
p
T
δ =
PH2925U_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 24 February 2009 5 of 12
NXP Semiconductors
PH2925U
N-channel TrenchMOS ultra low level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=250µA; V
GS
=0V; T
j
=-55°C 22.5 - - V
I
D
=250µA; V
GS
=0V; T
j
=25°C 25 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
= V
GS
; T
j
=-55°C;
see Figure 6; see Figure 7
--1.2V
I
D
=1mA; V
DS
= V
GS
; T
j
= 150 °C;
see Figure 6
; see Figure 7
0.25 - - V
I
D
=1mA; V
DS
= V
GS
; T
j
=25°C;
see Figure 7
; see Figure 6
0.45 0.7 0.95 V
I
DSS
drain leakage current V
DS
=25V; V
GS
=0V; T
j
= 150 °C - - 500 µA
V
DS
=25V; V
GS
=0V; T
j
= 25 °C - 0.06 1 µA
I
GSS
gate leakage current V
GS
=10V; V
DS
=0V; T
j
= 25 °C - 20 100 nA
V
GS
=-10V; V
DS
=0V; T
j
= 25 °C - 20 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=4.5V; I
D
=25A; T
j
=150°C;
see Figure 8; see Figure 9
-3.64.8mΩ
V
GS
=2.5V; I
D
=25A; T
j
=25°C - 3.2 4.2 mΩ
V
GS
=4.5V; I
D
=25A; T
j
=25°C;
see Figure 8
; see Figure 9
-2.33mΩ
R
G
internal gate resistance
(AC)
f=1MHz; T
j
= 25 °C - 1.55 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=50A; V
DS
=10V; V
GS
=4.5V;
T
j
=25°C; see Figure 10; see Figure 11
-92-nC
Q
GS
gate-source charge - 12 - nC
Q
GD
gate-drain charge - 20.2 - nC
V
GS(pl)
gate-source plateau
voltage
I
D
=50A; V
DS
=10V; T
j
=25°C;
see Figure 10
; see Figure 11
-1.6-V
C
iss
input capacitance V
DS
=10V; V
GS
= 0 V; f = 1 MHz;
T
j
=25°C; see Figure 12
- 6150 - pF
C
oss
output capacitance - 1170 - pF
C
rss
reverse transfer
capacitance
- 814 - pF
t
d(on)
turn-on delay time V
DS
=10V; R
L
=1Ω; V
GS
=4.5V;
R
G(ext)
=4.7Ω; T
j
=25°C
-30-ns
t
r
rise time - 80 - ns
t
d(off)
turn-off delay time - 258 - ns
t
f
fall time - 114 - ns
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 13
- 0.72 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=25V
-60-ns
P1-P3P4-P6P7-P9P10-P12P13-P13

PH2925U,115

Mfr. #:
Buy PH2925U,115
Manufacturer:
Nexperia
Description:
MOSFET PH2925U/LFPAK/REEL 7" Q1/T1 *S
Lifecycle:
New from this manufacturer.
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