OP250

Non-Contact Position Sensing
Datum detection
Infrared Light Emitting Diode
in Miniature SMD Package
OP250
Flat Lens
High Power
1206 Package Size
880nm Wavelength
The OP250 is a GaAlAs infrared LEDs mounted in a miniature SMT package. The device incorporates a flat
molded lens which enables a wide beam angle and provides an even emission pattern. This device is packaged
in a 1206 size chip carrier that is compatible with most automated mounting equipment. The OP250 is mechani-
cally and spectrally matched to the OP520 series phototransistors.
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
A subsidiary of
TT electronics plc
Machine automation
Optical encoders
Applications
Pb
LEAD FREE
-90 -60 -30 0 30 60 90
0%
20%
40%
60%
80%
100%
Relative Radiant Intensity
Angular Displacement (Degrees)
Relative Radiant Intensity vs.
Angular Displacement
OP250
SMD Infrared LED
OP250
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Electrical Characteristics (T
A
= 25°C unless otherwise noted)
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Storage Temperature Range -40° C to +85° C
Operating Temperature Range -25° C to +85° C
Lead Soldering Temperature 260° C
(1)
Reverse Voltage 30 V
Continuous Forward Current 50 mA
Power Dissipation 130 mW
(2)
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. De-rate linearly at 2.17 mW/° C above 25° C.
SYMBOL PARAMETER MIN MAX UNITS CONDITIONS
E
e(APT)
Apertured Radiant Incidence 0.2 mW/cm
2
I
F
= 20mA
(3)
V
F
Forward Voltage 1.5 V I
F
= 20mA
I
R
Reverse Current 100 µA V
R
= 2.0V
λ
P
Peak Emission Wavelength nm I
F
= 10mA
t
r
, t
f
Rise and Fall Time 500 ns I
F(PEAK)
= 100mA, PW = 10µs, 10% D.C.
TYP
890
Θ
HP
Emission Angle at Half Power Points 150 Deg. I
F
= 20mA
3. E
e(APT)
is a measurement of the apertured radiant incidence upon a sensing area 0.081” (2.06mm) in diameter, perpendicular to and cen-
tered on the mechanical axis of the lens, and 0.590” (14.99mm) from the measurement surface. E
e(APT)
is not necessarily uniform within
the measured area.
1.0
1.1
1.2
1.3
1.4
1.5
Forward Voltage (V)
100°C
-40°C
Relative Radiant Intensity vs.
Forward Current vs. Temperature
0 10 20 30 40 50
Forward Current (mA)
Relative Radiant Intensity
100%
150%
200%
250%
300%
350%
Normalized at I
F
= 20mA,
T
A
= 20°C. Temperatures
stepped in 20°C Increments
Forward Voltage vs. Forward
Current vs. Temperature
50%
0 10 20 30 40 50
Forward Current (mA)
-40°C
100°C
Temperatures stepped in 20°C
Increments
Issue 1.0 04.05
Page 2 of 3
SMD Infrared LED
OP250
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Issue 1.0 04.05
Page 2 of 3
PIN FUNCTION
1 Anode
2 Cathode
RECOMMENDED SOLDER PADS
[1.60±0.10]
.063±.0039
[1.50±0.10]
.059±.0039
[4.60±0.10]
.181±.0039
[1.60±0.10]
.063±.0039

OP250

Mfr. #:
Manufacturer:
Optek / TT Electronics
Description:
Infrared Emitters SMD Flat Lens
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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