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IPG20N06S2L35AATMA1
P1-P3
P4-P6
P7-P9
IPG20N
06S2
L-35A
1 Pow
er dissipatio
n
2 Drain current
P
tot
= f(
T
C
);
V
GS
≥
6 V; one channel active
I
D
= f(
T
C
);
V
GS
≥
6 V; one channel active
3 Safe operatin
g area
4 Max. t
ransient t
hermal impedance
I
D
=f(
V
DS
);
T
C
=25°C;
D
=0; one channel active
Z
thJC
= f(
t
p
)
param
eter:
t
p
param
eter:
D
=
t
p
/
T
1 µs
10 µs
100 µs
1 ms
1
10
100
1
10
100
I
D
[A]
V
DS
[V]
single pul
se
0.01
0.05
0.1
0.5
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-2
10
-1
10
0
10
1
Z
thJC
[K/W]
t
p
[s]
0
10
20
30
40
50
60
70
0
50
100
150
200
P
tot
[W]
T
C
[°C]
0
5
10
15
20
25
0
50
100
150
200
I
D
[A]
T
C
[°C]
R
ev. 1.0
page 4
2013-02-28
IPG20N
06S2
L-35A
5 Typ. out
put ch
aracteristics
4)
6 Typ. drain-
source on-
state resistan
ce
4)
I
D
= f(
V
DS
);
T
j
= 25 °C
R
DS(on)
= f(
I
D
);
T
j
= 25 °C
param
eter:
V
GS
param
eter:
V
GS
7 Typ. transf
er characteristics
4)
8 Typ. drain-
source on-
state resistan
ce
4)
I
D
= f(
V
GS
);
V
DS
= 6V
R
DS(on)
= f(
T
j
);
I
D
= 15 A;
V
GS
= 10 V
param
eter:
T
j
10
20
30
40
50
60
-60
-20
20
60
100
140
180
R
DS(on)
[m
Ω
]
T
j
[°C]
3 V
3.5 V
4 V
4.5 V
5 V
10 V
0
20
40
60
80
012345
I
D
[A]
V
DS
[V]
3 V
3.5 V
4 V
4.5 V
5 V
10 V
20
40
60
80
100
0
2
04
06
08
0
R
DS(on)
[m
Ω
]
I
D
[A
]
-55 °C
25 °C
175 °C
0
20
40
60
80
123456
I
D
[A]
V
GS
[V]
R
ev. 1.0
page 5
2013-02-28
IPG20N
06S2
L-35A
9 Typ. gate thre
shold voltage
10 Typ. Capacitan
ces
4)
V
GS(th)
= f(
T
j
);
V
GS
=
V
DS
C
= f(
V
DS
);
V
GS
= 0 V;
f
= 1 MHz
param
eter:
I
D
11 Typical fo
rward
diode charact
eristicis
4)
12 A
valanche ch
aracteristics
4)
IF = f(V
SD
)
I
A S
= f(
t
AV
)
param
eter:
T
j
param
eter: T
j(sta
rt)
25 °C
100 °C
150 °C
0.1
1
10
100
1
10
100
1000
I
AV
[A]
t
AV
[µs]
25 °C
175 °C
10
0
10
1
10
2
0
0.2
0.
4
0.6
0.8
1
1.2
1.4
I
F
[A]
V
SD
[V]
27µA
270µA
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
180
V
GS(th)
[V]
T
j
[°C]
Ciss
Coss
Crss
10
1
10
2
10
3
10
4
0
5
10
15
20
25
30
C
[
pF]
V
DS
[V]
R
ev. 1.0
page 6
2013-02-28
P1-P3
P4-P6
P7-P9
IPG20N06S2L35AATMA1
Mfr. #:
Buy IPG20N06S2L35AATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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IPG20N06S2L35AATMA1