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FFPF04F150STU

P1-P3P4-P4
©2000 Fairchild Semiconductor International
FFPF04F150S
Rev. F, September 2000
DAMPER DIODE
Absolute Maximum Ratings
T
C
=25°
°°
°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics
T
C
=25 °
°°
°C unless otherwise noted
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Symbol Parameter Value Units
V
RRM
Peak Repetitive Reverse Voltage 1500 V
I
F(AV)
Average Rectified Forward Current @ T
C
= 125°C4 A
I
FSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
40 A
T
J,
T
STG
Operating Junction and Storage Temperature - 65 to +150 °C
Symbol Parameter Value Units
R
θJC
Maximum Thermal Resistance, Junction to Case 5.0 °C/W
Symbol Parameter Min. Typ. Max. Units
V
FM
*
Maximum Instantaneous Forward Voltage
I
F
= 4A
I
F
= 4A
T
C
= 25 °C
T
C
= 125 °C
-
-
-
-
1.5
1.4
V
I
RM
*
Maximum Instantaneous Reverse Current
@ rated V
R
T
C
= 25 °C
T
C
= 125 °C
-
-
-
-
5
250
µA
t
rr
Maximum Reverse Recovery Time
(I
F
=1A, di/dt = 50A/µs)
--170ns
t
fr
Maximum Forward Recovery Time
(I
F
=6.5A, di/dt = 50A/µs)
--450ns
V
FRM
Maximum Forward Recovery Voltage - - 19 V
FFPF04F150S
Features
• High voltage and high reliability
• High speed switching
• Low forward voltage
TO-220F
1 2
1. Cathode 2. Anode
Applications
• Suitable for damper diode in horizontal
deflection circuits
©2000 Fairchild Semiconductor International Rev. F, September 2000
FFPF04F150S
Typical CharacteristicsTypical Characteristics
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
Figure 3. Typical Junction Capacitance
Figure 5. Typical Stored Charge
vs. Forward Current
Figure 2. Typical Reverse Current
vs. Reverse Voltage
Figure 4. Typical Reverse Recovery Time
vs. Forward Current
Figure 6. Forward Current Derating Curve
0.1
1
10
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0
T
J
= 25
o
C
T
J
= 125
o
C
Forward Voltage , V
F
[V]
Forward Current , I
F
[A]
0.1 1 10 100
0
20
40
60
80
100
Typical Capacitance
at 0V = 63 pF
Capacitance , Cj [pF]
Reverse Voltage , V
R
[V]
12345678910
0
500
1000
1500
2000
di/dt = 100A/
µ
s
di/dt = 50A/
µ
s
Stored Recovery Charge , Q
rr
[nC]
Forward Current , I
F
[A]
0 300 600 900 1200 1500
0.001
0.01
0.1
1
10
100
1000
T
J
= 100
o
C
T
J
= 125
o
C
T
J
= 25
o
C
Reverse Current , I
R
[
µ
A]
Reverse Voltage , V
R
[V]
12345678910
0
100
200
300
400
di/dt = 100A/
µ
s
di/dt = 50A/
µ
s
Reverse Recovery Time , t
rr
[ns]
Forward Current , I
F
[A]
80 100 120 140 160
0
1
2
3
4
5
6
DC
Average Forward Current , I
F(AV)
[A]
Case Temperature , T
C
[
o
C]
©2000 Fairchild Semiconductor International
Rev. F, September 2000
FFPF04F150S
Package Dimensions
TO-220F 2L
Dimensions in Millimeters
2.54
±0.20
0.80
±0.10
0.35
±0.10
2.76
±0.20
MAX1.47
(1.00x45°)
(0.70)
3.30
±0.10
15.87
±0.20
(1.80)
(6.50)
6.68
±0.20
15.80
±0.20
9.75
±0.30
12.00
±0.20
4.70
±0.20
10.16
±0.20
9.40
±0.20
ø3.18
±0.10
2.54TYP
[2.54
±0.20
]
2.54TYP
[2.54
±0.20
]
0.50
+0.10
–0.05
P1-P3P4-P4

FFPF04F150STU

Mfr. #:
Buy FFPF04F150STU
Manufacturer:
ON Semiconductor / Fairchild
Description:
Diodes - General Purpose, Power, Switching 4A/1500V Damper
Lifecycle:
New from this manufacturer.
Delivery:
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