SPB35N10T

P1-P3 P4-P6 P7-P8

2004-08-06

Page 1

SPI35N10

SPP35N10,SPB35N10

SIPMOS







Power-Transistor

Product Summary

V

DS

100 V

R

DS(on)

44 m

I

D

35 A

Feature

N-Channel

Enhancement mode

175°C operating temperature

Avalanche rated

dv/dt rated

P-TO263-3-2 P-TO220-3-1P-TO262-3-1

Marking

35N10

35N10

35N10

Type Package Ordering Code

SPP35N10 P-TO220-3-1 Q67042-S4123

SPB35N10 P-TO263-3-2 Q67042-S4103

SPI35N10 P-TO262-3-1 Q67042-S4124

Maximum Ratings,at T

j

= 25 °C, unless otherwise specified

Parameter

Symbol Value Unit

Continuous drain current

T

C

=25°C

T

C

=100°C

I

D

35

26.4

A

Pulsed drain current

T

C

=25°C

I

D puls

140

Avalanche energy, single pulse

I

D

=35 A , V

DD

=25V, R

GS

=25

E

AS

245 mJ

Reverse diode dv/dt

I

S

=35A, V

DS

=80V, di/dt=200A/µs, T

jmax

=175°C

dv/dt 6 kV/µs

Gate source voltage V

GS

±20

V

Power dissipation

T

C

=25°C

P

tot

150 W

Operating and storage temperature T

j

,

T

stg

-55... +175

°C

IEC climatic category; DIN IEC 68-1 55/175/56

2004-08-06

Page 2

SPI35N10

SPP35N10,SPB35N10

Thermal Characteristics

Parameter

Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case

R

thJC

- - 1 K/W

Thermal resistance, junction - ambient, leaded

R

thJA

- - 62

SMD version, device on PCB:

@ min. footprint

@ 6 cm

2

cooling area

F)

R

thJA

-

-

-

-

62

40

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

V

GS

=0V, I

D

=1mA

V

(BR)DSS

100 - - V

Gate threshold voltage, V

GS

= V

DS

I

D

=83µA

V

GS(th)

2.1 3 4

Zero gate voltage drain current

V

DS

=100V, V

GS

=0V, T

j

=25°C

V

DS

=100V, V

GS

=0V, T

j

=125°C

I

DSS

-

-

0.01

1

1

100

µA

Gate-source leakage current

V

GS

=20V, V

DS

=0V

I

GSS

- 1 100 nA

Drain-source on-state resistance

V

GS

=10V, I

D

=26.4A

R

DS(on)

- 36 44

m

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

2004-08-06

Page 3

SPI35N10

SPP35N10,SPB35N10

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter

Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

fs

V

DS

2*I

D

*R

DS(on)max

, I

D

=26.4A

12 23 - S

Input capacitance C

iss

V

GS

=0V, V

DS

=25V,

f=1MHz

- 1180 1570 pF

Output capacitance C

oss

- 245 326

Reverse transfer capacitance C

rss

- 137 206

Turn-on delay time t

d(on)

V

DD

=50V, V

GS

=10V,

I

D

=35A, R

G

=7

- 12.2 18.3 ns

Rise time t

r

- 63 95

Turn-off delay time t

d(off)

- 39 59

Fall time t

f

- 23 34

Gate Charge Characteristics

Gate to source charge

Q

gs

V

DD

=80V, I

D

=35A - 6.5 8.6 nC

Gate to drain charge Q

gd

- 27 41

Gate charge total Q

g

V

DD

=80V, I

D

=35A,

V

GS

=0 to 10V

- 49 65

Gate plateau voltage V

(plateau)

V

DD

=80V, I

D

=35A - 6.1 - V

Reverse Diode

Inverse diode continuous

forward current

I

S

T

C

=25°C - - 35 A

Inverse diode direct current,

pulsed

I

SM

- - 140

Inverse diode forward voltage V

SD

V

GS

=0V, I

F

=35A - 0.95 1.25 V

Reverse recovery time t

rr

V

R

=50V, I

F

=

l

S

,

di

F

/dt=100A/µs

- 80 100 ns

Reverse recovery charge Q

rr

- 230 290 nC

P1-P3 P4-P6 P7-P8

SPB35N10T

Mfr. #:

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH 100V 35A D2PAK

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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