DMN2004TK-7 Datasheet DMN2004TK-7 | P1-P3

DMN2004TK

Document number: DS30936 Rev. 5 - 2

1 of 6

www.diodes.com

November 2010

DMN2004T

K

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected up to 2kV

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SOT-523

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.002 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

DMN2004TK-7 SOT-523 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012

Code T U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT-523

Top View

E

q

uivalent Circuit

To

p

View

Source

Gate

Protection

Diode

Gate

Drai

n

G

S

D

ESD PROTECTED TO 2kV

NAB = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: T = 2006)

M = Month (ex: 9 = September)

NAB

YM

DMN2004TK

Document number: DS30936 Rev. 5 - 2

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www.diodes.com

November 2010

DMN2004T

K

NEW PRODUCT

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

±8 V

Drain Current (Note 4) Steady

State

T

A

= 25°C

T

A

= 85°C

I

D

540

390

mA

Pulsed Drain Current (Note 5)

I

DM

1.5 A

Thermal Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Total Power Dissipation (Note 4)

P

D

150 mW

Thermal Resistance, Junction to Ambient

R

θ

JA

833 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150 °C

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

BV

DSS

20

⎯ ⎯

V

GS

= 0V, I

D

= 10μA

Zero Gate Voltage Drain Current

I

DSS

⎯

0.8

0.9

300

⎯

nA

V

DS

= 16V, V

GS

= 0V

V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

⎯ ⎯

±1 μA

V

GS

= ±4.5V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

V

GS

(

th

)

0.5

⎯

1.0 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)

⎯

0.4

0.5

0.7

0.55

0.70

0.9

Ω

V

GS

= 4.5V, I

D

= 540mA

V

GS

= 2.5V, I

D

= 500mA

V

GS

= 1.8V, I

D

= 350mA

Forward Transfer Admittance

|Y

fs

|

200

⎯ ⎯

ms

V

DS

=10V, I

D

= 0.2A

Diode Forward Voltage (Note 6)

V

SD

0.5

⎯

1.4 V

V

GS

= 0V, I

S

= 115mA

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

⎯ ⎯

150 pF

V

DS

= 16V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

⎯ ⎯

25 pF

Reverse Transfer Capacitance

C

rss

⎯ ⎯

20 pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t

d

(

on

)

⎯

8.5

⎯

ns

V

DD

= 10V, R

L

= 47Ω, I

D

= 200mA,

V

GEN

=

4.5V, R

G

= 10Ω

Rise Time

t

r

⎯

9.1

⎯

ns

Turn-Off Delay Time

t

d

(

off

)

⎯

51

⎯

ns

Fall Time

t

f

⎯

28

⎯

ns

Notes: 4. Device mounted on FR-4 PCB.

5. Pulse width ≤10μS, Duty Cycle ≤1%

6. Short duration pulse test used to minimize self-heating effect.

DMN2004TK

Document number: DS30936 Rev. 5 - 2

3 of 6

www.diodes.com

November 2010

DMN2004T

K

NEW PRODUCT

0

12345

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

DS

I, D

R

AI

N

C

U

R

E

N

T

(A)

D

V , GATE-SOURCE VOLTAGE (V)

Fig. 2

GS

Reverse Drain Current vs. Source-Drain Voltage

T , CHANNEL TEMPERATURE (°C)

Fig. 3 Gate Threshold Voltage

vs. Channel Temperature

ch

0.1

I DRAIN CURRENT (A)

Fig. 4 Static Drain-Source On-Resistance

vs. Drain Current

D

,

1

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(on)

Ω

0.5

I , DRAIN CURRENT (A)

Fig. 5 Static Drain-Source On-Resistance

vs. Drain Current

D

V = 5V

Pulsed

GS

T = 150 C

A

°

T = -55C

A

°

T = -25C

A

°

T = 0C

A

°

T = 25C

A

°

T = 125 C

A

°

T = 85C

A

°

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(on)

Ω

6

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( ) (NORMALIZED)

DS(on)

Ω

DMN2004TK-7

DMN2004TK-7

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