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Document Number: 72359
S-71035-Rev. B, 21-May-07
Vishay Siliconix
DG2037/2038/2039
New Product
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 5.0 V)
Parameter Symbol
Test Conditions
Otherwise Unless Specified
V+ = 5 V, ± 10 %, V
IN
= 0.8 or 2.4 V
e
Temp
a
Limits
- 40 to 85 °C
Unit Min
b
Typ
c
Max
b
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
V
COM
Full 0 V+ V
On-Resistance
r
ON
V+ = 4.5 V, V
COM
= 2.5 V, I
NO
, I
NC
= 10 mA
Room
Full
2.5
1.6
5
6
Ω
r
ON
Flatness
d
r
ON
Flatness
V+ = 4.5 V, V
COM
= 2.5 to V+, I
NO
, I
NC
= 10 mA
Room 0.4
r
ON
Match
d
r
ON
Match
V+ = 4.5 V, I
D
= 10 mA, V
COM
= 2.5 V
Room 0.2
Switch Off Leakage Current
I
NO(off)
I
NC(off)
V+ = 5.5 V
V
NO
, V
NC
= 1 V/4.5 V, V
COM
= 4.5 V/1 V
Room
Full
- 1
- 10
1
10
nA
I
COM(off)
Room
Full
- 1
- 10
1
10
Channel-On Leakage Current
I
COM(on)
V+ = 5.5 V
V
NO
, V
NC
= V
COM
= 1 V/4.5 V
Room
Full
- 1
- 10
1
10
Digital Control
Input High Voltage
V
INH
Full 2.4
V
Input Low Voltage
V
INL
Full 0.8
Input Capacitance
C
in
f = 1 MHz Full 8 pF
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full - 1 1 µA
Dynamic Characteristics
Tur n -O n Ti m e
d
t
ON
V
NO
or V
NC
= 3 V, R
L
= 300 Ω, C
L
= 35 pF
Figures 1 and 2
Room
Full
19 30
35
ns
Turn-Off Time
d
t
OFF
Room
Full
12 22
30
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0 Ω, Figure 3
Room 1 pC
Off-Isolation
d
OIRR
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz
Room - 61
dB
Crosstalk
d
X
TALK
Room - 67
Source-Off Capacitance
d
C
NC/NO(off)
V
IN
= 0 or V+, f = 1 MHz
Room 15
pF
Drain-Off Capacitance
d
C
COM(off)
Room 17
Channel-On Capacitance
d
C
ON
Room 35
Power Supply
Power Supply Range V+ 4.5 5.5 V
Power Supply Current I+
V
IN
= 0 or V+
0.02 1.0 µA
Power Consumption
P
C
5.5 µW
