TECHNICAL DATA
MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/558
Devices Qualified Level
2N6987
2N6987U
2N6988
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
(1)
Ratings Symbol Value Units
Collector-Emitter Voltage
(4)
V
CEO
60 Vdc
Collector-Base Voltage
(4)
V
CBO
60 Vdc
Emitter-Base Voltage
(4)
V
EBO
5.0 Vdc
Collector Current
I
C
600 mAdc
Total Power Dissipation @ T
A
= +25
0
C
2N6987
(2)
2N6987U
(2)
2N6988
(3)
P
T
1.5
1.0
0.4
W
Operating & Storage Junction Temperature Range
T
op
,
T
stg
-65 to +200
0
C
1) Maximum voltage between transistors shall be ≥ 500 Vdc
2) Derate linearly 8.57 mW/
0
C above T
A
= +25
0
C
3) Derate linearly 2.286 mW/
0
C above T
A
= +25
0
C.
4) Ratings apply to each transistor in the array.
2N6987*
TO- 116
2N6987U*
20 PIN LEADLESS
2N6988*
14 PIN FLAT PACK
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
V
(BR)CEO
60 Vdc
Collector-Base Cutoff Current
V
CB
= 60 Vdc
V
CB
= 50 Vdc
I
CBO
10
10
µAdc
ηAdc
Emitter-Base Cutoff Current
V
BE
= 5.0 Vdc
V
EB
= 3.5 Vdc
I
EBO
10
50
µAdc
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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