HTMS1x01_8x01 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.4 — 21 May 2015
152934 4 of 57
NXP Semiconductors
HTMS1x01; HTMS8x01
HITAG μ transponder IC
5. Ordering information
Table 2. Ordering information
Type number Package
Name Description Type Version
HTMS1001FUG/AM Wafer sawn, megabumped wafer, 150 μm, 8 inch, UV HITAG P, 210 pF -
HTMS8001FUG/AM Wafer sawn, megabumped wafer, 150 μm, 8 inch, UV HITAG P, 280pF -
HTMS8101FUG/AM Wafer sawn, megabumped wafer, 150 μm, 8 inch, UV HITAG P Advanced,
280 pF
-
HTMS8201FUG/AM Wafer sawn, megabumped wafer, 150 μm, 8 inch, UV HITAG P Advanced+,
280 pF
-
HTMS8001FTB/AF XSON3 plastic extremely thin small outline package; no
leads; 4 terminals; body 1 u 1.45 u 0.5 mm
HITAG P, 280 pF SOT1122
HTMS8101FTB/AF XSON3 plastic extremely thin small outline package; no
leads; 4 terminals; body 1 u 1.45 u 0.5 mm
HITAG P Advanced,
280 pF
SOT1122
HTMS8201FTB/AF XSON3 plastic extremely thin small outline package; no
leads; 4 terminals; body 1 u 1.45 u 0.5 mm
HITAG P Advanced+,
280 pF
SOT1122
HTMS8001FTK/AF HVSON2 plastic thermal enhanced very thin small outline
package; no leads; 2 terminals; body 3 u 2 u
0.85 mm
HITAG P, 280 pF SOT899-1
HTMS8101FTK/AF HVSON2 plastic thermal enhanced very thin small outline
package; no leads; 2 terminals; body 3 u 2 u
0.85 mm
HITAG P Advanced,
280 pF
SOT899-1
HTMS8201FTK/AF HVSON2 plastic thermal enhanced very thin small outline
package; no leads; 2 terminals; body 3 u 2 u
0.85 mm
HITAG P Advanced+,
280 pF
SOT899-1
HTMS1x01_8x01 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.4 — 21 May 2015
152934 5 of 57
NXP Semiconductors
HTMS1x01; HTMS8x01
HITAG μ transponder IC
6. Block diagram
The HITAG μ transponder ICs require no external power supply. The contactless interface
generates the power supply and the system clock via the resonant circuitry by inductive
coupling to the Read/Write Device (RWD). The interface also demodulates data
transmitted from the RWD to the HITAG μ transponder IC, and modulates the magnetic
field for data transmission from the HITAG μ transponder IC to the RWD.
Data are stored in a non-volatile memory (EEPROM). The EEPROM has a capacity of up
to 1760 bit and is organized in blocks.
Fig 1. Block diagram of HITAG μ transponder IC
001aai334
CLK
MOD
DEMOD
VREG
VDD
data
in
data
out
clock
R/W
ANALOGUE
RF INTERFACE
PA D
PA D
RECT
Cres
DIGITAL CONTROL
TRANSPONDER
ANTICOLLISION
READ/WRITE
CONTROL
ACCESS CONTROL
EEPROM INTERFACE
CONTROL
RF INTERFACE
CONTROL
EEPROM
SEQUENCER
CHARGE PUMP
HTMS1x01_8x01 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.4 — 21 May 2015
152934 6 of 57
NXP Semiconductors
HTMS1x01; HTMS8x01
HITAG μ transponder IC
7. Pinning information
Fig 2. HITAG μ - Mega bumps bondpad locations
Table 3. HITAG μ - Mega bumps dimensions
Description Dimension
(X) chip size 550 Pm
(Y) chip size 550 Pm
(1) pad center to chip edge 100.5 Pm
(2) pad center to chip edge 48.708 Pm
(3) pad center to chip edge 180.5 Pm
(4) pad center to chip edge 55.5 Pm
(5) pad center to chip edge 48.508 Pm
001aaj823
(4) (4)
(3)
(Y)
(X)
(2)
(5)
(6) (6)
(1)
(1)
LA LB

HTMS8301FUG/AM,005

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RFID TAG R/W 100-150KHZ ENCAP
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