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AUIRF1324S

P1-P3P4-P6P7-P9P10-P11
AUIRF1324S
AUIRF1324L
V
DSS
24V
R
DS(on)
typ.
1.3m
max.
1.65m
I
D (Silicon Limited)
340A
I
D (Package Limited)
195A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
1 2015-11-11
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 340
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 240
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 195
I
DM
Pulsed Drain Current 1420
P
D
@T
C
= 25°C Maximum Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 270
mJ
I
AR
Avalanche Current See Fig.14,15, 18a, 18b A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt Peak Diode Recovery 0.46 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.50
°C/W
R
JA
Junction-to-Ambient (PCB Mount), D
2
Pak ––– 40
D
2
Pak
AUIRF1324S
TO-262
AUIRF1324L
S
D
G
S
D
G
D
Base part number Package Type
Standard Pack
Form Quantity
AUIRF1324L TO-262 Tube 50 AUIRF1324L
AUIRF1324S D
2
-Pak
Tube 50 AUIRF1324S
Tape and Reel Left 800 AUIRF1324STRL
Orderable Part Number
G D S
Gate Drain Source
HEXFET
®
Power MOSFET
AUIRF1324S/L
2 2015-11-11
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.014mH, R
G
= 25, I
AS
= 195A, V
GS
=10V. Part not recommended for use above this value.
I
SD
195A, di/dt 450A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width 400µs; duty cycle 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at T
J
approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 24 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C Reference to 25°C, I
D
= 5mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– 1.3 1.65
m
V
GS
= 10V, I
D
= 195A 
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
gfs Forward Trans conductance 180 ––– ––– S V
DS
= 10V, I
D
= 195A
R
G
Gate Resistance ––– 2.3 –––

I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
= 24V, V
GS
= 0V
––– ––– 250 V
DS
= 24V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge ––– 160 240
nC
I
D
= 195A
Q
gs
Gate-to-Source Charge ––– 84 –––
V
DS
= 12V
Q
gd
Gate-to-Drain Charge ––– 49 ––– V
GS
= 10V
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
) ––– 76 –––
t
d(on)
Turn-On Delay Time ––– 17 –––
ns
V
DD
= 16V
t
r
Rise Time ––– 190 –––
I
D
= 195A
t
d(off)
Turn-Off Delay Time ––– 83 –––
R
G
= 2.7
t
f
Fall Time ––– 120 –––
V
GS
= 10V
C
iss
Input Capacitance ––– 7590 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 3440 ––– V
DS
= 24V
C
rss
Reverse Transfer Capacitance ––– 1960 –––
ƒ = 1.0MHz, See Fig. 5
C
oss eff.(ER)
Effective Output Capacitance (Energy Related) ––– 4700 ––– V
GS
= 0V, V
DS
= 0V to 19V
C
oss eff.(TR)
Effective Output Capacitance (Time Related) ––– 4490 ––– V
GS
= 0V, V
DS
= 0V to 19V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 350
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 1420
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C,I
S
= 195A,V
GS
= 0V 
t
rr
Reverse Recovery Time
––– 46 –––
ns
T
J
= 25°C V
DD
= 20V
––– 71 ––– T
J
= 125°C I
F
= 195A,
Q
rr
Reverse Recovery Charge
––– 160 –––
nC
T
J
= 25°C di/dt = 100A/µs 
––– 430 –––
T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 7.7 ––– A
T
J
= 25°C
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
AUIRF1324S/L
3 2015-11-11
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 1 Typical Output Characteristics
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.0V
60µs PULSE WIDTH
Tj = 25°C
4.0V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.0V
60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.0V
2 3 4 5 6 7 8 9
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 15V
60µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120140160 180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 195A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 50 100 150 200
Q
G
,
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 19V
V
DS
= 12V
I
D
= 195A
P1-P3P4-P6P7-P9P10-P11

AUIRF1324S

Mfr. #:
Buy AUIRF1324S
Manufacturer:
Infineon Technologies
Description:
MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms
Lifecycle:
New from this manufacturer.
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