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SI3473CDV-T1-GE3

P1-P3P4-P6P7-P9P10-P11
www.vishay.com
4
Document Number: 69947
S09-0660-Rev. C, 20-Apr-09
Vishay Siliconix
Si3473CDV
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
10
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
1
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.01
0.02
0.03
0.04
0.05
0.06
012345
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
A
= 25 °C
T
A
= 125 °C
I
D
= 8.1 A
0
15
30
5
10
Power (W)
Time (s)
1 60010
20
0.10.01
100
25
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
T
A
= 25 °C
Single Pulse
1ms
10 ms
1s,10s
DC
Limited byR
DS(on)
*
BVDSS
100 ms
Document Number: 69947
S09-0660-Rev. C, 20-Apr-09
www.vishay.com
5
Vishay Siliconix
Si3473CDV
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
3
6
9
12
15
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Package Limited
I
D
- Drain Current (A)
Power, Junction-to-Foot
0
1
2
3
4
5
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
www.vishay.com
6
Document Number: 69947
S09-0660-Rev. C, 20-Apr-09
Vishay Siliconix
Si3473CDV
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69947
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-
3
10
-
2
1 10 60010
-
1
10
-
4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
P1-P3P4-P6P7-P9P10-P11

SI3473CDV-T1-GE3

Mfr. #:
Buy SI3473CDV-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -12V Vds 8V Vgs TSOP-6
Lifecycle:
New from this manufacturer.
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