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SST4119-T1-E3

P1-P3P4-P6
2N/PN/SST4117A Series
Vishay Siliconix
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
www.vishay.com
1
N-Channel JFETs
2N4117A PN4117A SST4117
2N4118A PN4118A SST4118
2N4119A PN4119A SST4119
PRODUCT SUMMARY
Part Number V
GS(off)
(V) V
(BR)GSS
Min (V) g
fs
Min (mS)
I
DSS
Min (mA)
4117 −0.6 to −1.8 −40 70 30
4118 −1 to −3 −40 80 80
4119 −2 to −6 −40 100 200
FEATURES BENEFITS APPLICATIONS
D Ultra-Low Leakage: 0.2 pA
D Very Low Current/Voltage Operation
D Ultrahigh Input Impedance
D Low Noise
D Insignificant Signal Loss/Error Voltage
with High-Impedance Source
D Low Power Consumption (Battery)
D Maximum Signal Output, Low Noise
D High Sensitivity to Low-Level Signals
D High-Impedance Transducer
Amplifiers
D Smoke Detector Input
D Infrared Detector Amplifier
D Precision Test Equipment
DESCRIPTION
The 2N/PN/SST4117A series of n-channel JFETs provide
ultra-high input impedance. These devices are specified with
a 1-pA limit and typically operate at 0.2 pA. This makes them
perfect choices for use as high-impedance sensitive front-end
amplifiers.
The hermetically sealed TO-206AF package allows full
military processing per MIL-S-19500 (see Military
Information). The TO-226A (TO-92) plastic package provides
a low-cost option. The TO-236 (SOT-23) package provides
surface-mount capability. Both the PN and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).
G
S
TO-206AF
(TO-72)
D
Top View
2N4117A
2N4118A
2N4119A
C
1
23
4
D
G
Top View
PN4117A
PN4118A
PN4119A
TO-226AA
(TO-92)
S
1
2
3
D
S
G
TO-236
(SOT-23)
2
3
1
Top View
SST4117 (T7)*
SST4118 (T8)*
SST4119 (T9)*
*Marking Code for TO-236
For applications information see AN105.
2N/PN/SST4117A Series
Vishay Siliconix
www.vishay.com
2
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage −40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature : (2N Prefix) −65 to 175_C. . . . . . . . . . . . . . . . . . .
(PN, SST Prefix) −55 to 150_C. . . . . . . . . . . . .
Operating Junction Temperature :
(2N Prefix) −55 to 175_C. . . . . . . . . . . . . . . . . . .
(PN, SST Prefix) −55 to 150_C. . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Power Dissipation (case 25_C) :
(2N Prefix)
a
300 mW. . . . . . . . . . . . . . . . . . . . . .
(PN, SST Prefix)
b
350 mW. . . . . . . . . . . . . . . .
Notes
a. Derate 2 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
4117 4118 4119
Parameter Symbol Test Conditions Typ
a
Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= −1 mA , V
DS
= 0 V
−70
−40 −40 −40
V
Gate-Source Cutoff Voltage V
GS(off)
V
DS
= 10 V, I
D
= 1 nA
−0.6 −1.8 −1 −3 −2 −6
V
Saturation Drain Current I
DSS
V
DS
= 10 V, V
GS
= 0 V
30
90
80
240
200
600
mA
V
GS
= −20 V
V
DS
= 0 V
−0.2 −1 −1 −1 pA
Gt R C t
I
V
GS
= −20 V
V
DS
= 0 V
T
A
= 150_C
2N
−0.4 −2.5 −2.5 −2.5 nA
Gate Reverse Current I
GSS
V
GS
= −10 V
PN −0.2 −1 −1 −1
pA
V
GS
= −10 V
V
DS
= 0 V
SST −0.2 −10 −10 −10
pA
V
GS
= −10 V
V
DS
= 0 V
T
A
= 100_C
PN/SST −0.03 −2.5 −2.5 −2.5 nA
Gate Operating Current
b
I
G
V
DG
= 15 V, I
D
= 30 mA
−0.2
pA
Drain Cutoff Current
b
I
D(off)
V
DS
= 10 V, V
GS
= −8 V 0.2
pA
Gate-Source Forward Voltage
b
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V 0.7 V
Dynamic
Common-Source
Forward Transconductance
g
fs
V
D
S
= 10 V, V
GS
= 0 V
70
210
80
250
100
330
mS
Common-Source
Output Conductance
g
os
V
DS
= 10 V
,
V
GS
= 0 V
f = 1 kHz
3 5 10
mS
Common-Source
C
i
2N/PN 1.2 3 3 3
Common-Source
Input Capacitance
C
iss
V
DS
= 10 V
V
GS
= 0 V
SST 1.2
pF
Common-Source
C
V
GS
= 0 V
f = 1 MHz
2N/PN 0.3 1.5 1.5 1.5
pF
Common-Source
Reverse Transfer Capacitance
C
rss
f = 1 MHz
SST 0.3
Equivalent Input Noise Voltage
b
e
n
V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
15
nV⁄
√Hz
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NT
b. This parameter not registered with JEDEC.
2N/PN/SST4117A Series
Vishay Siliconix
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Gate Leakage Current
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Output Characteristics
1000
0 −5−4−3−2−1
800
0
06 30
g
fs
I
DSS
T
A
= 25_C
100 mA
I
GSS
@ 25_C
100 mA
Output Characteristics
500
400
300
100
0
−0.5 V
−1.0 V
−2.0 V
−1.5 V
V
GS
= 0 V
15
0 −3 −5−4−2−1
12
9
6
3
0
0.01 0.1 1
200
160
120
40
0
5
4
3
2
1
0
r
DS
@ I
D
= 10 mA, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
r
DS
g
os
T
A
= −55_C
125_C
V
DS
= 10 V
f = 1 kHz
100
0168420
80
60
20
0
V
GS
= 0 V
−0.5 V
−0.4 V
−0.3 V
−0.2 V
−0.1 V
V
GS(off)
− Gate-Source Cutoff Voltage (V)
V
DS
− Drain-Source Voltage (V)
V
DG
− Drain-Gate Voltage (V)
I
D
− Drain Current (mA)V
GS(off)
− Gate-Source Cutoff Voltage (V)
V
DS
− Drain-Source Voltage (V)
600
400
200
12 18 24
80
25_C
V
GS(off)
= −0.7 V V
GS(off)
= −2.5 V
20040
12 0 16842012
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
300
240
180
120
60
0
10 mA
0.1 pA
1 pA
10 pA
100 pA
1 nA
I
GSS
@ 125_C
V
GS(off)
= −2.5 V
10 mA
V
GS(off)
= −2.5 V
I
DSS
− Saturation Drain Current (µA)
g
fs
− Forward Transconductance (µS)
g
os
− Output Conductance (µS)
g
fs
− Forward Transconductance (µS)
I
G
− Gate Leakage
I
D
− Drain Current (µA)
I
D
− Drain Current (µA)
T
A
= 125_C
r
DS(on)
− Drain-Source On-Resistance (kW)
P1-P3P4-P6

SST4119-T1-E3

Mfr. #:
Buy SST4119-T1-E3
Manufacturer:
Vishay Semiconductors
Description:
JFET 70V 200uA
Lifecycle:
New from this manufacturer.
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