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XP151A13A0MR-G
Power MOSFET
PRODUCTS PACKAGE ORDER UNIT
XP151A13A0MR
SOT-23 3,000/Reel
XP151A13A0MR-G
(*)
SOT-23 3,000/Reel
PARAMETER SYMBOL RATINGS UNITS
Drain - Source Voltage Vdss 20 V
Gate - Source Voltage Vgss ±8 V
Drain Current (DC) Id 1 A
Drain Current (Pulse) Idp 4 A
Reverse Drain Current Idr 1 A
Channel Power Dissipation *
Pd 0.5 W
Channel Temperature Tch 150 ℃
Storage Temperature Tstg -55~150 ℃
■GENERAL DESCRIPTION
The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■FEATURES
Low On-State Resistance :
Rds(on) = 0.1
Ω
@ Vgs = 4.5V
:
Rds(on) = 0.14
Ω
@ Vgs = 2.5V
:
Rds(on) = 0.25
Ω
@ Vgs = 1.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage : 1.5V
N-Channel Power MOSFET
DMOS Structure
Small Package : SOT-23
Environmentally Friendly : EU RoHS Compliant, Pb Free
■PIN CONFIGURATION/
MARKING
■PRODUCT NAMES
■
BSOLUTE M
XIMUM R
TINGS
■EQUIVALENT CIRCUIT
Ta = 25℃
* When implemented on a ceramic PCB
ETR1119_003
G：Gate
S：Source
D：Drain
1 1 3
x
* x represents production lot number.
The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS compliant.
