OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BAR64V-05W-E3-18

P1-P3P4-P5
BAR64V-05W
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 25-Feb-13
1
Document Number: 81836
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RF PIN Diodes - Dual, Common Cathode in SOT-323
DESCRIPTION
Characterized by low reverse capacitance the PIN diodes
BAR64V-05W was designed for RF signal switching and
tuning. As a function of the forward bias current the forward
resistance (RF) can be adjusted over a wide range. A long
carrier life time offers low signal distortion for signals over
10 MHz up to 3 GHz. Typical applications for these PIN
diodes are switches and attenuators in wireless, mobile, and
TV-systems.
FEATURES
• High voltage current controlled RF resistor
• Small diode capacitance
• Low series inductance
• Low forward resistance
• Improved performance due to two separate dice
• Base P/N-E3 - RoHS-compliant, commercial grade
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• For frequencies up to 3 GHz
• RF-signal tuning
• Signal attenuator and switches
• Mobile, wireless and TV-Applications
MECHANICAL DATA
Case: SOT-323
Weight: approx. 5.7 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
12
3
PARTS TABLE
PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS
BAR64V-05W BAR64V-05W-E3-08 or BAR64V-05W-E3-18 DW5 Dual diodes common cathode Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PART TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
100 V
Forward continuous current I
F
100 mA
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction temperature T
j
150 °C
Storage temperature range T
stg
- 55 to + 150 °C
Operating temperature range T
op
- 55 to + 125 °C
BAR64V-05W
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 25-Feb-13
2
Document Number: 81836
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Resistance vs. Forward Current
Fig. 2 - Diode Capacitance vs. Reverse Voltage
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Typical Charge Recovery Curve
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
1.1 V
Reverse voltage I
F
= 10 μA V
R
100 V
Reverse current V
R
= 50 V I
R
0.05 μA
Diode capacitance
f = 1 MHz, V
R
= 0 V C
D
0.5 pF
f = 1 MHz, V
R
= 1 V C
D
0.37 0.5 pF
f = 1 MHz, V
R
= 20 V C
D
0.23 0.35 pF
Differential forward resistance
f = 100 MHz, I
F
= 1 mA r
f
10 20
f = 100 MHz, I
F
= 10 mA r
f
23.8
f = 100 MHz, I
F
= 100 mA r
f
0.8 1.35
Charge carrier lifetime I
F
= 10 mA, I
R
= 6 mA, i
R
= 3 mA t
rr
1.8 μs
Series inductance L
S
1nH
0.1
1.0
10.0
100.0
0.1 1 10 100
18342
I - Forward Current (mA)
F
r - Forward Resistance (Ω)
f
f = 100 MHz
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
16 20 24 28
18334
V - Reverse Voltage (V)
R
C - Diode Capacitance (pF)
D
f = 1 MHz
12
084
0.01
0.10
1.00
10.00
100.00
0.5 0.6 0.7 0.8 0.9 1.0
I - Forward Current (mA)
V - Forward Voltage (V)
F
18326
F
- 8
- 6
- 4
- 2
0
2
4
6
8
10
12
- 500 500 1500 2500 3500
18338
t
rr
- Reverse Recovery Time (ns)
I - Forward Current (mA)
F
I = 10 mA
F
I = 6 mA
R
i = 3 mA
R
BAR64V-05W
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 25-Feb-13
3
Document Number: 81836
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Insertion Loss of One Diode Inserted in Series with 50
Strip Line
Fig. 6 - Isolation of One Diode Inserted in Series with 50
Strip Line
Fig. 7 - Second Order Intercept Point for One Diode Inserted in
50 Strip Line
- 3
- 2.5
- 2
- 1.5
- 1
- 0.5
0
0 0.5 1 1.5 2 2.5 3 3.5
f - Frequency (GHz)
|S
21
|²
- Insertion Loss (dB)
I
F
= 0.5 mA
21027
I
F
= 1 mA
I
F
= 3mA
I
F
= 10 mA
I
F
= 100 mA
- 25
- 20
- 15
- 10
- 5
0
0 0.5 1 1.5 2 2.5 3 3.5
f - Frequency ( GHz )
|S
21
|
²
=
|S
12
|
²
- Isolation (dB)
V
R
= 0, diode zero-biased
21028
0
50
100
150
0.1 1 10
I
F
- Forward Current (mA)
I
P2
- Second Order Intercept Point (dBm)
f = 1.8 GHz
f = 0.9 GHz
21029
P1-P3P4-P5

BAR64V-05W-E3-18

Mfr. #:
Buy BAR64V-05W-E3-18
Manufacturer:
Vishay Semiconductors
Description:
PIN Diodes PIN DIODE SOT323-E3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet