©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
KSB810
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
* PW≤10ms, Duty cycle≤50%
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: PW≤350µs, Duty cycle≤2%
h
FE
Classification
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage -30 V
V
CEO
Collector-Emitter Voltage -25 V
V
EBO
Emitter-Base Voltage -5.0 V
I
C
Collector Current (DC) -700 mA
I
CP
* Collector Current (Pulse) -1.0 A
P
C
Collector Power Dissipation 350 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
= -30V, I
E
=0 -100 nA
I
EBO
Emitter Cut-off Current V
EB
= -5V, I
C
=0 -100 nA
h
FE1
h
FE2
* DC Current Gain V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -700mA
70
35
200
100
400
V
BE
(on) * Base-Emitter on Voltage V
CE
= -6V, I
C
= -10mA -600 -640 -700 mV
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= -700mA, I
B
= -70mA -0.25 -0.4 V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= -700mA, I
B
= -70mA -0.95 -1.2 V
C
ob
Output Capacitance V
CB
= -6V, I
E
=0, f=1MHz 17 40 pF
f
T
Current Gain Bandwidth Product V
CE
= -6V, I
C
=-10mA 50 160 MHz
Classification O Y G
h
FE1
70 ~ 140 120 ~ 240 200 ~ 400
KSB810
Audio Frequency Amplifier
• Complement to KSD1020
1.Emitter 2. Collector 3. Base
TO-92S
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