2SMES-01

1
2SMES-01
Surface-mounted MEMS Switch
Surface-mounted, ultracompact SPDT
MEMS switch usable up to 10-GHz band
(typical).
Exceptional high-frequency characteristics in a
broad spectrum up to 10 GHz (typical)
At 8 GHz (50):
Isolation: 30 dB min.,
Insertion loss: 1 dB max.
Ultracompact size: 5.2×3.0×1.8 mm (L×W×H)
Contact switching endurance of over 100 million
cycles. (0.5 mA at 0.5 VDC, resistive load)
Power consumption of 10 µW max.
Equivalent Circuit Design Application Example
Semiconductor testers
High-frequency measurement devices
RF components
List of Models
Standard Models with Surface-mounting Terminals
RoHS compliant
+V2GND
+V1
RF_2
RF_CRF_1
Classification Structure Contact form Model Packaging Package
quantity
Model Minimum
order
Single-side stable Plastic sealed SPDT 2SMES-01 2” IC Pack 56/Tray 2SMES-01 1
JEDEC Tray 250/Tray 2SMES-01CT 150
2
2SMES-012SMES-01
Specifications
Contact Switching Ratings
Note: Unless otherwise specified, initial values are based on a
temperature of 23°C and a humidity of 65%.
* These values are for a V.SWR of 1.2 or less at the load.
High-frequency Characteristics
Note: 1. The impedance of the measurement system is 50 .
2. The above values are initial values.
3. These values are for a V.SWR of less than 1.2 at the
load.
4. Unless otherwise specified, initial values are based on
a temperature of 23°C and a humidity of 65%.
Input Ratings
Note: Unless otherwise specified, initial values are based on a temperature of 23°C and a humidity of 65%.
Characteristics
Note: 1. The above values are initial values.
2. Unless otherwise specified, initial values are based on a temperature of 23°C and a humidity of 65%.
* The contact resistance was measured with 10 mA at 1 VDC with a voltage drop method.
Item Load Resistive load
Rated load 0.5 mA at 0.5 VDC
Rated carry current 100 mA at 10 VDC
RF: 30 dBm*
Maximum switching voltage 0.5 VDC
Maximum switching current 0.5 mADC
Maximum switching capacity 0.25 mW
Item Frequency 2 GHz 8 GHz 10 GHz 12 GHz
Isolation --- 30 dB ---
Insertion Loss --- 1 dB 1 dB
(Typ.)
3dB
Return Loss --- 10 dB ---
Maximum peak power 36 dBm --- ---
Maximum carry power 30 dBm --- ---
Rated voltage (VDC) Rated current (mA) Must operate
voltage (V)
Must release
voltage (V)
Absolute
maximum voltage
(V)
Rated power
consumption (µW)
DC 34±5% --- 90% max. of rated
voltage
10% min. of rated
voltage
40 10
Classification Single-side stable model
Item Model 2SMES-01
Contact resistance 1,500 m max. *
Operating time 100 µs max. (Depends on the rated voltage operation.)
Release time 100 µs max. (Depends on the rated voltage operation.)
Insulation
resistance
V-GND 100 M (at 40 VDC)
others 100 M (at 100 VDC)
Vibration
resistance
Destruction 10 Hz to 500 Hz 10 G
Malfunction 10 Hz to 500 Hz 10 G
Shock
resistance
Destruction
1,000 m/s
2
(100 G)
Malfunction
1,000 m/s
2
(100 G)
Life
expectancy
Mechanical 100,000,000 Operations min.
Electrical 100,000,000 Operations min.
ESD 100 V (Human body model)
Ambient temperature Operating: 20°C to 85°C (with no icing or condensation)
Ambient humidity Operating: 5% to 85%
Weight Approx. 0.1 g
3
2SMES-012SMES-01
Typical Example of Drive Circuit for RF MEMS Switch
1. This Switch uses an integrated structure for the DC-GND on the input side and the RF-GND on the output side. For a relay drive cir-
cuit, first be sure to ground the GND pins and then use a high-side switch to turn the operating voltage ON and OFF.
2. This Switch uses an electrostatic drive relay. To turn OFF the relay, the charge accumulated on the primary side must be discharged.
Install a discharge circuit in the relay drive circuit. The resistance value for discharge circuit must be 1 M or less. If there is no dis-
charge circuit, the relay will not turn OFF. This may result in contact sticking.
3. This Switch is designed so that the electrostatic actuator operates at a high speed. Because of this, the time constant of the drive
waveform may affect the operating characteristics and life performance of the Switch. Therefore, the drive circuit must be designed
so that the square wave time constant (τ) in the vicinity of the operating input pins (Vcont_1 and Vcont_2) is greater than 0.5 µs and
less than 10 µs.
2SMES-01
INPUT 1
DRIVER IC Vcont_2
Vcont_1
R
R
+Vcc
INPUT 2
RF_1
RF_com
RF_2
Gate Driver

2SMES-01

Mfr. #:
Manufacturer:
Omron Electronics
Description:
RF Switch ICs RF MEMS Switch 10GHz SPDT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet