Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage
1.4 1.8 2.2 V
5.8 7.2
T
J
=125°C 8.7 10.5
9 11.5 mΩ
g
FS
62 S
V
SD
0.71 1 V
I
S
30 A
C
iss
840 pF
C
oss
330 pF
C
rss
50 pF
R
g
0.6 1.2 1.8 Ω
Q
g
(10V) 13 nC
Q
g
(4.5V) 6.2 nC
Q
gs
2.5 nC
Q
gd
3.5 nC
Q
gs
2.5 nC
Q
gd
3.5 nC
t
D(on)
5.5 ns
ID=250µA, VGS=0V
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
V
GS
=10V, V
DS
=15V, I
D
=20A
Total Gate Charge
V
GS
=10V, I
D
=20A
Reverse Transfer Capacitance
Gate resistance
DYNAMIC PARAMETERS
Turn-On DelayTime
V
GS
=4.5V, V
DS
=15V, I
D
=20A
Gate Source Charge
f=1MHz
Static Drain-Source On-Resistance
Gate Drain Charge
Total Gate Charge
Input Capacitance
Gate-Body leakage current
V
GS
=4.5V, I
D
=20A
Diode Forward Voltage
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Gate Source Charge
Gate Drain Charge
V
DS
=V
GS,
I
D
=250µA
Forward Transconductance
V
DS
=5V, I
D
=20A
mΩ
I
S
=1A,V
GS
=0V
SWITCHING PARAMETERS
R
DS(ON)
I
DSS
µAZero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
V
DS
=0V, V
GS
=±20V
Maximum Body-Diode Continuous Current
t
D(off)
17 ns
t
f
3 ns
t
rr
11 ns
Q
rr
18
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=500A/µs
I
F
=20A, dI/dt=500A/µs
Turn-Off Fall Time
R
GEN
=3Ω
Turn-Off DelayTime
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The Power
dissipation P
DSM
is based on R
θJA
t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
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