BDW83C
BDW84C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■ BDW83C IS A STMicroelectronics
PREFERRED SALESTYPE
■ COMPLEMENTARY PNP - NPN DEVICES
■ HIGH CURRENT CAPABILITY
■ FAST SWITCHING SPEED
■ HIGH DC CURRENT GAIN
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW83C is a Silicon Epitaxial-Base NPN
power monolithic Darlington transistor mounted in
Jedec TO-218 plastic package. It is intended for
use in power linear and switching applications.
The complementary type is BDW84C.
®
INTERNAL SCHEMATIC DIAGRAM
December 2002
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDW83C
PNP BDW84C
V
CBO
Collector-Base Voltage (I
E
= 0) 100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 100 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 15 A
I
CM
Collector Peak Current 40 A
I
B
Base Current 0.5 A
P
tot
Total Dissipation at T
c
≤ 25
o
C
130 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1
2
3
TO-218
1/4