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BC857C,215

P1-P3P4-P6P7-P9P10-P11
2004 Jan 16 3
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856; BC857; BC858
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC856 − −80 V
BC857 − −50 V
BC858 − −30 V
V
CEO
collector-emitter voltage open base
BC856 − −65 V
BC857 − −45 V
BC858 − −30 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −100 mA
I
CM
peak collector current − −200 mA
I
BM
peak base current − −200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS TYPICAL UNIT
R
th(j-a)
thermal resistance from junction to
ambient
in free air; note 1 500 K/W
2004 Jan 16 4
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856; BC857; BC858
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −30 V; I
E
= 0 − −1 −15 nA
V
CB
= −30 V; I
E
= 0;
T
j
= 150 °C
− − −4 μA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
= 0 − − −100 nA
h
FE
DC current gain I
C
= −2 mA; V
CE
= −5 V
BC856 125 − 475
BC857 125 − 800
BC856A; BC857A 125 − 250
BC856B; BC857B; BC858B 220 − 475
BC857C 420 − 800
V
CEsat
collector-emitter saturation voltage I
C
= −10 mA; I
B
= −0.5 mA − −75 −300 mV
I
C
= −100 mA; I
B
= −5 mA;
note
1
− −250 −650 mV
V
BEsat
base-emitter saturation voltage I
C
= −10 mA; I
B
= −0.5 mA − −700 − mV
I
C
= −100 mA; I
B
= −5 mA;
note
1
− −850 − mV
V
BE
base-emitter voltage I
C
= −2 mA; V
CE
= −5 V −600 −650 −750 mV
I
C
= −10 mA; V
CE
= −5 V − − −820 mV
C
c
collector capacitance V
CB
= −10 V; I
E
= I
e
= 0;
f
= 1 MHz
− 4.5 − pF
f
T
transition frequency V
CE
= −5 V; I
C
= −10 mA;
f
= 100 MHz
100 − − MHz
F noise figure I
C
= −200 μA; V
CE
= −5 V;
R
S
= 2 kΩ; f = 1 kHz;
B
= 200 Hz
− 2 10 dB
2004 Jan 16 5
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856; BC857; BC858
handbook, halfpage
0
200
300
400
500
h
FE
100
MGT711
− 10
−2
− 10
−1
− 1 − 10 − 10
2
− 10
3
I
C
(mA)
(1)
(2)
(3)
Fig.2 DC current gain as a function of collector
current; typical values.
BC857A; V
CE
= −5 V.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
0
− 1200
− 1000
− 800
− 600
− 400
− 200
MGT712
− 10
−2
− 10
−1
− 1 − 10 − 10
2
− 10
3
I
C
(mA)
V
BE
(mV)
(1)
(2)
(3)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
BC857A; V
CE
= −5 V.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
handbook, halfpage
− 10
4
− 10
3
− 10
2
− 10
MGT713
− 10
−1
− 1 − 10 − 10
2
− 10
3
I
C
(mA)
V
CEsat
(mV)
(1)
(2)(3)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
BC857A; I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
MGT714
− 10
−1
− 1 − 10 − 10
2
− 10
3
I
C
(mA)
0
− 1200
− 1000
− 800
− 600
− 400
− 200
V
BEsat
(mV)
(1)
(2)
(3)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
BC857A; I
C
/I
B
= 20.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
P1-P3P4-P6P7-P9P10-P11

BC857C,215

Mfr. #:
Buy BC857C,215
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PNP GP 45V 100mA
Lifecycle:
New from this manufacturer.
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