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BC858B,215

P1-P3P4-P6P7-P9P10-P11
2004 Jan 16 6
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856; BC857; BC858
handbook, halfpage
0
400
600
800
1000
h
FE
200
MGT715
− 10
−2
− 10
−1
− 1 − 10 − 10
2
− 10
3
I
C
(mA)
(1)
(2)
(3)
Fig.6 DC current gain as a function of collector
current; typical values.
BC857B; V
CE
= −5 V.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
0
− 1200
− 1000
− 800
− 600
− 400
− 200
MGT716
− 10
−2
− 10
−1
− 1 − 10 − 10
2
− 10
3
I
C
(mA)
V
BE
(mV)
(1)
(2)
(3)
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
BC857B; V
CE
= −5 V.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
handbook, halfpage
− 10
4
− 10
3
− 10
2
− 10
MGT717
− 10
−1
− 1 − 10 − 10
2
− 10
3
I
C
(mA)
V
CEsat
(mV)
(1)
(2)
(3)
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
BC857B; I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
MGT718
− 10
−1
− 1 − 10 − 10
2
− 10
3
I
C
(mA)
0
− 1200
− 1000
− 800
− 600
− 400
− 200
V
BEsat
(mV)
(1)
(2)
(3)
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
BC857B; I
C
/I
B
= 20.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
2004 Jan 16 7
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856; BC857; BC858
handbook, halfpage
0
400
600
800
1000
h
FE
200
MGT719
− 10
−2
− 10
−1
− 1 − 10 − 10
2
− 10
3
I
C
(mA)
(1)
(2)
(3)
Fig.10 DC current gain as a function of collector
current; typical values.
BC857C; V
CE
= −5 V.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
0
− 1200
− 1000
− 800
− 600
− 400
− 200
MGT720
− 10
−1
− 1 − 10 − 10
2
− 10
3
I
C
(mA)
V
BE
(mV)
(1)
(2)
(3)
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
BC857C; V
CE
= −5 V.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
handbook, halfpage
− 10
4
− 10
3
− 10
2
− 10
MGT721
− 10
−1
− 1 − 10 − 10
2
− 10
3
I
C
(mA)
V
CEsat
(mV)
(1)
(2)
(3)
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
BC857C; I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
MGT722
− 10
−1
− 1 − 10 − 10
2
− 10
3
I
C
(mA)
0
− 1200
− 1000
− 800
− 600
− 400
− 200
V
BEsat
(mV)
(1)
(2)
(3)
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
BC857C; I
C
/I
B
= 20.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
2004 Jan 16 8
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856; BC857; BC858
PACKAGE OUTLINE
UNIT
A
1
max.
b
p
cD
E
e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
b
p
D
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
P1-P3P4-P6P7-P9P10-P11

BC858B,215

Mfr. #:
Buy BC858B,215
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS GP TAPE-7
Lifecycle:
New from this manufacturer.
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