2SA1930,ONKQ(J Datasheet 2SA1930(Q,M), 2SA1930,CKQ(J, 2SA1930,ONKQ(J | P1-P3

2SA1930

2007-06-15

1

TOSHIBA Transistor Silicon PNP Epitaxial Type

2SA1930

Power Amplifier Applications

Driver Stage Amplifier Applications

• High transition frequency: f

T

= 200 MHz (typ.)

• Complementary to 2SC5171

Absolute Maximum Ratings

(Tc = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage V

CBO

−180 V

Collector-emitter voltage V

CEO

−180 V

Emitter-base voltage V

EBO

−5 V

Collector current I

C

−2 A

Base current I

B

−1 A

Ta = 25°C 2.0

Collector power

dissipation

Tc = 25°C

P

C

20

W

Junction temperature T

j

150 °C

Storage temperature range T

stg

−55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC ―

JEITA SC-67

TOSHIBA 2-10R1A

Weight: 1.7 g (typ.)

2SA1930

2007-06-15

2

Electrical Characteristics

(Tc = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current I

CBO

V

CB

= −180 V, I

E

= 0 ― ― −5.0 μA

Emitter cut-off current I

EBO

V

EB

= −5 V, I

C

= 0 ― ― −5.0 μA

Collector-emitter breakdown voltage V

(BR) CEO

I

C

= −10 mA, I

B

= 0 −180 ― ― V

h

FE

(1) V

CE

= −5 V, I

C

= −0.1 A 100 ― 320

DC current gain

h

FE

(2) V

CE

= −5 V, I

C

= −1 A 50 ― ―

Collector-emitter saturation voltage V

CE (sat)

I

C

= −1 A, I

B

= −0.1 A ― −0.24 −1.0 V

Base-emitter voltage V

BE

V

CE

= −5 V, I

C

= −1 A ― −0.68 −1.5 V

Transition frequency f

T

V

CE

= −10 V, I

C

= −0.3 A ― 200 ― MHz

Collector output capacitance C

ob

V

CB

= −10 V, I

C

= 0, f = 1 MHz ― 26 ― pF

Marking

Lot No.

A

line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

A1930

Part No. (or abbreviation code)

2SA1930

2007-06-15

3

−0.01

V

CEO

max

10 ms*

−3

−5

−1

−3

−0.5

−0.1

−0.3

−0.05

−0.03

−1000 −10 −30 −100 −300

100 μs*

100 ms*

1 ms*

10

−0.01 −0.1 −1

1000

100

Tc = 100°C

Tc = −25°C

Tc = 25°C

−10

−0.1

−0.01 −0.1 −1

−10

−1

−10

Tc = 100°C

Tc = −25°C

Tc = 25°C

−0.01

0

−2.0

−0.4

−0.8

−1.2

−1.6

Tc = 100°C

−25

25

−0.4

−0.8 −1.2 −1.6 −2.0

0

−2.0

−0.4

−0.8

−1.2

−10

−1.6

I

B

= −2 mA

−300

−2 −4 −6 −8

−6

−4

−200

−100

−40

−30

−20

−10

−50

Collector-emitter voltage V

CE

(V)

I

C

– V

CE

Collector current I

C

(A)

Base-emitter voltage V

BE

(V)

I

C

– V

BE

Collector current I

C

(A)

Collector current I

C

(A)

V

CE (sat)

– I

C

Collector-emitter saturation voltage

V

CE (sat)

(V)

Collector-emitter voltage V

CE

(V)

Safe Operating Area

Collector current I

C

(A)

Common emitter

V

CE

= −5 V

Collector current I

C

(A)

h

FE

– I

C

DC current gain h

FE

Common emitter

V

CE

= −5 V

*: Single nonrepetitive pulse

Tc = 25°C

Curves must be derated

linearly with increase in

temperature.

I

C

max (pulsed)*

I

C

max

DC operation

Tc = 25°C

Common emitter

I

C

/I

B

= 10

Common emitter

Tc = 25°C

(continuous)

−8

2SA1930,ONKQ(J

2SA1930,ONKQ(J

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