BYW77G-200-TR Datasheet BYW77G-200-TR | P1-P3

BYW77G-200

®

October 1999 - Ed:3A

HIGH EFFICIENCY FAST RECOVERY DIODES

I

F(AV)

25 A

V

RRM

200 V

trr 50 ns

V

F

0.85 V

MAIN PRODUCT CHARACTERISTICS

VERY SMALL CONDUCTION LOSSES

NEGLIGIBLE SWITCHING LOSSES

LOW FORWARD AND REVERSE RECOVERY

TIME

HIGH SURGE CURRENT CAPABILITY

SMD PACKAGE

FEATURES AND BENEFITS

Single rectifier suited for switchmode power supply

and high frequency DC to DC converters.

Packaged in D

2

PAK, this surface mount device is

intended for use in high frequency inverters, free

wheeling and polarity protection applications.

DESCRIPTION

1

2

3

4

1 & 3 4

Symbol Parameter Value Unit

V

RRM

Repetitive peak reverse voltage 200 V

I

F(RMS)

RMS forward current 50 A

I

F(AV)

Average forward current Tc=125

°

C

δ

= 0.5

25 A

I

FSM

Surge non repetitive forward current tp=10ms

sinusoidal

200 A

I

FRM

Repetitive peak forward current tp = 5

µ

s

f = 5 kHz

310 A

Tstg

Tj

Storage and junction temperature range - 40 to + 150

°

C

ABSOLUTE MAXIMUM RATINGS

D

2

PAK

(Plastic)

1/5

Obsolete Product(s) - Obsolete Product(s)

Symbol Parameter Value Unit

R

th (j-c)

Junction to case 1

°

C/W

THERMAL RESISTANCE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

R

* Reverse leakage current V

R

= V

RRM

T

j

= 25

°

C25

µ

A

T

j

= 100

°

C2.5mA

V

F **

Forward voltage drop I

F

= 20 A T

j

= 125

°

C0.85V

I

F

= 40 A T

j

= 125

°

C1.00

I

F

= 40 A T

j

= 25

°

C1.15

Pulse test : * tp = 5 ms, δ < 2 %

** tp = 380 µs, δ < 2 %

To evaluate the conduction losses use the following equation :

P = 0.65 x I

F(AV)

+ 0.0075 I

F

2

(RMS)

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

rr

Reverse recovery

time

T

j

= 25

°

C I

F

= 0.5A

Irr = 0.25 A I

R

= 1A

35 ns

T

j

= 25

°

C I

F

= 1A

dI

F

/dt = -50A/

µ

s V

R

=

30V

50

t

fr

Forward recovery

time

T

j

= 25

°

C I

F

= 1A

dI

F

/dt = 100A/

µ

s

V

FR

= 1.1 x V

F

max

10

ns

V

FP

Peak forward

voltage

T

j

= 25

°

C I

F

= 1A

dI

F

/dt = 100A/

µ

s 1.5

V

RECOVERY CHARACTERISTICS

PIN OUT configuration in D

2

PAK:

BYW77G-200

2/5

Obsolete Product(s) - Obsolete Product(s)

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

0

100

200

300

400

500

I

M(A)

P=20W

P=30W

P=40W

T

I

M

=tp/T

tp

Fig.2 :

Peak current versus form factor.

Tj=125 C

o

IFM(A)

0.1 1 10 100 300

VFM(V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

Fig.3 :

Forward voltage drop versus forward cur-

rent (maximum values).

0.1

1.0

0.2

0.5

Zth(j-c) (tp. )

K=

Rth(j-c)

=0.5

=0.2

=0.1

Single pulse

tp(s)

T

=tp/T

tp

1.0E-03 1.0E-02 1.0E-01

1.0E+00

K

Fig.4 :

Relative variation of thermal impedance

junction to case versus pulse duration.

0 5 10 15 20 25 30

0.0

2.5

5.0

7.5

10.0

12.5

15.0

17.5

20.0

22.5

25.0

27.5

30.0

=0.05

=0.1

=0.2

=0.5

T

=tp/T

tp

I

F(av)(A)

P

F(av)(W)

=1

Fig.1 :

Average forward power dissipation versus

average forward current.

0 20 40 60 80 100 120 140 160

0

5

10

15

20

25

30

T

=tp/T

tp

=0.5

F(av)(A)

I

o

Tamb( C)

Rth(j-a)=15 C/W

o

Rth(j-a)=Rth(j-c)

Fig.6 :

Average current versus ambient tempera-

ture. (

δ

= 0.5)

0.001 0.01 0.1 1

0

50

100

150

200

250

300

IM

t

=0.5

t(s)

I

M(A)

Tc=25 C

o

Tc=75 C

o

Tc=125 C

o

Fig.5 :

Non repetitive surge peak forward current

versus overload duration.

BYW77G-200

3/5

Obsolete Product(s) - Obsolete Product(s)

BYW77G-200-TR

BYW77G-200-TR

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