IMT1AT110 Datasheet EMT1T2R, UMT1NTN, IMT1AT110 | P1-P3

EMT1 / UMT1N / IMT1A

Transistors

Rev.C 1/3

General Purpose Transistor

(Isolated Dual Transistors)

EMT1 / UMT1N / IMT1A

zFeatures

1) Two 2SA1037AK chips in a EMT or UMT or SMT

package.

2) Mounting possible with EMT3 or UMT3 or SMT3

automatic mounting machines.

3) Transistor elements are independent,

eliminating interference.

zStructure

Epitaxial planar type

PNP silicon transistor

zEquivalent circuit

EMT1 / UMT1N IMT1A

Tr

2

Tr

1

(3) (2) (1)

(4) (5) (6)

Tr

2

Tr

1

(4) (5) (6)

(3) (2) (1)

The following characteristics apply to both

Tr

1 and Tr2.

zAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol

V

CBO

V

CEO

V

EBO

I

C

Tj

Tstg

P

C

EMT1, UMT1N

IMT1A

Limits

−60

−50

−6

−150

150

−55 to +150

150 (TOTAL)

300 (TOTAL)

Unit

V

mA

°C

mW

∗

1

∗

2

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Junction temperature

Storage temperature

Collector

power

dissipation

∗1 120mW per element must not be exceeded.

∗2 200mW per element must not be exceeded.

zDimensions (Unit : mm)

ROHM : EMT6

EMT1

ROHM : UMT6

EIAJ : SC-88

UMT1N

(6) (5) (4)

(1) (2) (3)

(6) (5) (4)

(1) (2) (3)

(4) (5) (6)

(3) (2) (1)

ROHM : SMT6

EIAJ : SC-74

IMT1A

Abbreviated symbol : T1

Each lead has same dimensions

EMT1 / UMT1N / IMT1A

Transistors

Rev.C 2/3

zElectrical characteristics (Ta = 25°C)

Parameter Symbol

BV

CBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE(sat)

fT

Cob

Min.

−60

−50

−6

−

120

−

140

4

−

−0.1

560

−0.5

−

5

VI

C = −50µA

I

C = −1mA

I

E = −50µA

V

CB = −60V

V

EB = −6V

V

CE = −6V, IC = −1mA

V

CE = −12V, IE = 2mA, f = 100MHz

I

C/IB = −50mA/−5mA

V

CB = −12V, IE = 0A, f = 1MHz

V

µA

−

V

MHz

pF

Typ. Max. Unit Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Output capacitance

zPackaging specifications

Package Taping

Code

UMT1N

EMT1

Type

IMT1A

TN

3000

T2R

8000

−

T110

3000

−

Basic ordering unit (pieces)

zElectrical characteristic curves

-0.2

COLLECTOR CURRENT : Ic

(mA)

-50

-20

-10

-5

-2

-1

-0.5

-0.2

-0.1

-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6

VCE = −6V

BASE TO EMITTER VOLTAGE : VBE

(V)

Fig.1 Grounded emitter propagation

characteristics

Ta = 100°C

25°C

−

40°C

-0.4

-4

-8

-1.20

-2

-6

-10

-0.8 -1.6 -2.0

-3.5µA

-7.0

-10.5

-14.0

-17.5

-21.0

-24.5

-28.0

-31.5

I

B

= 0

Ta = 25°C

-35.0

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.2 Grounded emitter output

characteristics ( Ι )

-40

-80

-5-3 -4-2-1

-20

-60

-100

0

I

B

= 0

Ta = 25°C

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.3 Grounded emitter output

characteristics ( ΙΙ )

-50µA

-100

-150

-200

-250

-500

-450

-400

-350

-300

500

200

100

50

-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100

DC CURRENT GAIN : h

FE

Ta = 25°C

V

CE

= -5V

-3V

-1V

COLLECTOR CURRENT : I

C

(mA)

Fig.4 DC current gain vs. collector

current ( Ι )

500

200

100

50

-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100

DC CURRENT GAIN : hFE

COLLECTOR CURRENT : IC

(mA)

Fig.5 DC current gain vs. collector

current ( ΙΙ )

VCE = -6V

Ta = 100°C

-40°C

25°C

-0.1

-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100

-1

-0.5

-0.2

-0.05

Ta = 25°C

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

C

(mA)

Fig.6 Collector-emitter saturation

voltage vs. collector current ( Ι )

I

C

/I

B = 50

20

10

EMT1 / UMT1N / IMT1A

Transistors

Rev.C 3/3

-0.1

-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100

-1

-0.5

-0.2

-0.05

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

C

(mA)

Fig.7 Collector-emitter saturation

voltage vs. collector current ( ΙΙ )

l

C

/l

B

= 10

Ta = 100°C

25°C

-40°C

50 1000.5 20

50

100

200

500

1000

12 510

EMITTER CURRENT : I

E

(mA)

TRANSITION FREQUENCY : f

T

(MHz)

Fig.8 Gain bandwidth product vs.

emitter current

Ta = 25

°C

V

CE = -

12V

COLLECTOR TO BASE VOLTAGE : V

CB

(V)

EMITTER TO BASE VOLTAGE : V

EB

(V)

COLLECTOR OUTPUT CAPACITANCE : Cob (

pF)

EMITTER INPUT CAPACITANCE : Cib (

pF)

Collector output capacitance vs.

Emitter input capacitance vs.

collector-base voltage

emitter-base voltage

Fig.9

-0.5 -20

2

5

10

-1 -2 -5 -10

20

Cib

Cob

Ta = 25°C

f = 1MHz

I

E

= 0A

I

C

= 0A

IMT1AT110

IMT1AT110

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