VS-43CTQ...S-M3, VS-43CTQ...-1-M3 Series
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Vishay Semiconductors
Revision: 27-Oct-17
2
Document Number: 94942
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 135 °C, rectangular waveform
20
A
per device 40
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
V
RRM
applied
850
10 ms sine or 6 ms rect. pulse 275
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH 7.50 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
0.50 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
20 A
T
J
= 25 °C
0.81
V
40 A 0.98
20 A
T
J
= 125 °C
0.67
40 A 0.81
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
1
mA
T
J
= 125 °C 11
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.71 V
Forward slope resistance r
t
0.43 m
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 1480 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to 175 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
2.0
°C/W
Maximum thermal resistance,
junction to case per package
1.0
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf cm
(lbf in)
maximum 12 (10)
Marking device
Case style D
2
PAK (TO-263AB)
43CTQ080S
43CTQ100S
Case style TO-262AA
43CTQ080-1
43CTQ100-1
