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VSMY1850

P1-P3P4-P6P7-P7
VSMY1850
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 02-May-13
1
Document Number: 83397
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diodes, 850 nm,
Surface Emitter Technology
DESCRIPTION
As part of the SurfLight
TM
portfolio, the VSMY1850 is an
infrared, 850 nm emitting diode based on GaAlAs surface
emitter chip technology with high radiant intensity, high
optical power and high speed, molded in clear, untinted
0805 plastic package for surface mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: 0805
• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
• Peak wavelength:
p
= 850 nm
• High reliability
• High radiant power
• High radiant intensity
• High speed
• Angle of half sensitivity: = ± 60°
• Suitable for high pulse current operation
• 0805 standard surface-mountable package
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Emitter source for proximity sensors
• IR touch panels
•IR Flash
• IR illumination
•3D TV
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
22119
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) (deg)
p
(nm) t
r
(ns)
VSMY1850 10 ± 60 850 10
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMY1850 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805
VSMY1850
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 02-May-13
2
Document Number: 83397
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.1, t
p
= 100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1A
Power dissipation P
V
190 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature acc. figure 7, J-STD-020 T
sd
260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R
thJA
270 K/W
22108
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
0
40
80
120
160
200
020406080100
R
thJA
= 270 K/W
22109
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
0
20
40
60
80
100
120
020406080100
R
thJA
= 270 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.65 1.9 V
I
F
= 1 A, t
p
= 100 μs V
F
2.9 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
- 1.4 mV/K
I
F
= 10 mA TK
VF
- 1.18 mV/K
Reverse current I
R
not designed for reverse operation μA
Junction capacitance
V
R
= 0 V, f = 1 MHz,
E = 0 mW/cm
2
C
J
125 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
51015mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
85 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms e50mW
Temperature coefficient of radiant
power
I
F
= 100 mA TK
e
- 0.35 %/K
Angle of half intensity ± 60 deg
Peak wavelength I
F
= 100 mA
p
840 850 870 nm
Spectral bandwidth I
F
= 30 mA  30 nm
Temperature coefficient of
p
I
F
= 30 mA TK
p
0.25 nm
Rise time I
F
= 100 mA, 20 % to 80 % t
r
10 ns
Fall time I
F
= 100 mA, 20 % to 80 % t
f
10 ns
Virtual source diameter d 0.5 mm
VSMY1850
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 02-May-13
3
Document Number: 83397
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Radiant Intensity vs. Forward Current
Fig. 5 - Relative Radiant Power vs. Wavelength
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
V
F
- Forward Voltage (V)
22097
I
F
- Forward Current (A)
0.001
0.01
0.1
1
10
0 0.5 1 1.5 2 2.5 3 3.5
t
p
= 100 µs
22110
I
F
- Forward Current (A)
I
e
- Radiant Intensity (mW/sr)
0.1
1
10
100
1000
0.001 0.01 0.1 1
t
p
= 100 µs
λ - Wavelength (nm)
21776-1
Φ
e, rel
- Relative Radiant Power
0
0.25
0.5
0.75
1
650 750 850 950
I
F
= 30 mA
0.4 0.2 0
I
e, rel
- Relative Radiant Intensity
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
948013-1
P1-P3P4-P6P7-P7

VSMY1850

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Description:
Infrared Emitters - High Power 60 Degree 10mW/sr 850nm 0805
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