OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

ZXMN10A25KTC

P1-P3P4-P6P7-P8
ZXMN10A25K
Document number: DS33569 Rev. 3 - 2
1 of 8
www.diodes.com
July 2012
© Diodes Incorporated
Z
X
MN10A25K
A
Product Line o
f
Diodes Incorporated
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
Package
Max I
D
T
A
= +25°C
100V
125mΩ @ V
GS
= 10V
TO252
(DPAK)
6.4A
150mΩ @ V
GS
= 6V
5.8A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
• DC-DC Converters
• Power Management Functions
• Disconnect Switches
• Motor Control
Features
• Low On-Resistance
• Fast Switching Speed
• Low Gate Drive
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: TO252 (DPAK)
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.33 grams (approximate)
Ordering Information (4 & 5)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMN10A25KTC ZXMN10A25 13 16 2,500
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For Packaging Details, go to our website at http://www.diodes.com.
5. Products with Q-suffix are automotive grade. Automotive products are electrical and thermal the same as the commercial, except where specified.
Marking Information
Green
Top View
Pin Out -Top View
Equivalent Circuit
TO252
GS
D
D
ZXMN10A25 = Product Type Marking Code
ZXMN
10A25
ZXMN10A25K
Document number: DS33569 Rev. 3 - 2
2 of 8
www.diodes.com
July 2012
© Diodes Incorporated
Z
X
MN10A25K
A
Product Line o
f
Diodes Incorporated
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source voltage
V
DSS
100 V
Gate-Source voltage
V
GS
±20
V
Continuous Drain current
V
GS
= 10V
(Note 7)
I
D
6.4
A
T
A
= +70°C (Note 7)
5
(Note 6) 4.2
Pulsed Drain current (Note 8)
I
DM
21 A
Continuous Source current (Body diode) (Note 7)
I
S
10 A
Pulsed Source current (Body diode) (Note 8)
I
SM
21 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 6)
P
D
4.25
34
W
mW/°C
(Note 7)
9.85
78.7
(Note 9)
2.11
16.8
Thermal Resistance, Junction to Ambient
(Note 6)
R
θ
JA
29.4
°C/W
(Note 7) 12.7
(Note 9) 59.1
Thermal Resistance, Junction to Lead (Note 10)
R
θ
JL
1.43
Operating and storage temperature range
T
J
, T
STG
-55 to 150
°C
Notes: 6. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
8. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
9. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMN10A25K
Document number: DS33569 Rev. 3 - 2
3 of 8
www.diodes.com
July 2012
© Diodes Incorporated
Z
X
MN10A25K
A
Product Line o
f
Diodes Incorporated
Thermal Characteristics
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
1 10 100
10m
100m
1
10
110100
10m
100m
1
10
T
amb
=25°C
25mm x 25mm
1oz FR4
R
DS(on)
Limit
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
I
D
Drain Current (A)
V
DS
Drain-Source Voltage (V)
0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
50mm x 50mm
2oz FR4
25mm x 25mm
1oz FR4
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
5
10
15
20
25
30
T
amb
=25°C
25mm x 25mm
1oz FR4
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
25mm x 25mm
1oz FR4
50mm x 50mm
2oz FR4
Safe Operating Area
Single Pulse
T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
D=0.1
D=0.05
Single Pulse
D=0.2
D=0.5
T
amb
=25°C
50mm x 50mm
2oz FR4
Transient Thermal Impedance
Pulse Width (s)
Thermal Resistance (°C/W)
T
amb
=25°C
50mm x 50mm
2oz FR4
100µs
1ms
10ms
100ms
1s
DC
R
DS(on)
Limit
V
DS
Drain-Source Voltage (V)
I
D
Drain Current (A)
P1-P3P4-P6P7-P8

ZXMN10A25KTC

Mfr. #:
Buy ZXMN10A25KTC
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-Chan 100V MOSFET (UMOS)
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet