EAITRDA1 Datasheet EAITRDA1 | P1-P3

1

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Technical Data Sheet

Opto Interrupter

EAITRDA1

Features

․Fast response time

․High analytic

․High sensitivity

․Cut-off visible wavelength λP=940nm

․Pb Free

․This product itself will remain within RoHS compliant version.

Description

The EAITRDA1 consist of an infrared emitting diode and an NPN silicon phototransistor, encased

side-by-side on converging optical axis in a black thermoplastic housing,

The phototransistor receives radiation from the IRED only .This is the normal situation.

But when an object is in between , phototransistor could not receives the radiation.

For additional component information , please refer to IR928-6C-F and PT928-6C-F

Applications

․Mouse Copier

․Switch Scanner

․Floppy disk driver

․Non-contact Switching

․For Direct Board

DATASHEET

EAITRDA1

2

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Device Selection Guide

Device No.

Chip Material

LENS COLOR

IR

GaAlAs

Water clear

PT

Silicon

Water clear

Absolute Maximum Ratings (Ta=25℃)

Parameter

Symbol

Ratings

Unit

Input

Power Dissipation at(or below) 25℃Free

Air Temperature

Pd

75

mW

Reverse Voltage

V

R

5

V

Forward Current

I

F

50

mA

Peak Forward Current (*1) Pulse width

≦100μs, Duty cycle=1%

I

FP

1

A

Output

Collector Power Dissipation

P

C

75

mW

Collector Current

I

C

20

mA

Collector-Emitter Voltage

B V

CEO

30

V

Emitter-Collector Voltage

B V

ECO

5

V

Operating Temperature

Topr

-25~+85

℃

Storage Temperature

Tstg

-40~+85

℃

Lead Soldering Temperature (*2) (1/16 inch form

body for 5 seconds)

Tsol

260

℃

Notes: (＊1) tw=100 μsec. , T=10 msec. (＊2) t=5 Sec

DATASHEET

EAITRDA1

3

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Electro-Optical Characteristics (Ta=25℃)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Condition

Input

Forward Voltage

V

F

-

1.2

1.5

V

I

F

=20mA

Reverse Current

I

R

-

10

μA

V

R

=5V

Peak Wavelength

λ

P

-

940

-

nm

I

F

=20mA

Output

Dark Current

I

CEO

-

100

nA

V

CE

=20V,Ee=0mW/cm

2

C-E Saturation

Voltage

V

CE(sat)

-

0.4

V

I

C

=2mA,Ee=1mW/cm

Collector Current(＊3)

I

C(ON)

0.5

-

mA

V

CE

=5V,I

F

=20mA

Response

Time

Rise Time

t

R

-

15

-

μs

V

CE

=5V I

C

=1mA R

L

=1K

Fall Time

t

F

-

15

-

μs

EAITRDA1

EAITRDA1

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