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UG12HT-E3/45

P1-P3P4-P5
UG12xT, UGF12xT, UGB12xT
www.vishay.com
Vishay General Semiconductor
Revision: 24-Feb-16
1
Document Number: 88758
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Ultrafast Rectifier
FEATURES
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder dip 275 °C max., 10 s per JESD 22-B106
(for TO-220AC and ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high voltage and high frequency power factor
correction, freewheeling diodes and secondary DC/DC
rectification application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
12 A
V
RRM
500 V to 600 V
I
FSM
135 A
t
rr
30 ns
V
F
at I
F
= 12 A 1.5 V
T
J
max. 150 °C
Package
TO-220AC, ITO-220AC,
TO-263AB
Diode variation Single die
CASE
PIN 2
PIN 1
TO-220AC
UG12xT
ITO-220AC
UGF12xT
UGB12xT
PIN 1
PIN 2
K
HEATSINK
1
2
1
2
K
PIN 2
PIN 1
TO-263AB
1
2
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UG12HT UG12JT UNIT
Max. repetitive peak reverse voltage V
RRM
500 600 V
Max. working reverse voltage V
RWM
400 480 V
Max. RMS voltage V
RMS
350 420 V
Max. DC blocking voltage V
DC
500 600 V
Max. average forward rectified current (fig. 1) I
F(AV)
12 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
135 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
Isolation voltage (ITO-220AC only)
from terminals to heatsink t = 1 min
V
AC
1500 V
UG12xT, UGF12xT, UGB12xT
www.vishay.com
Vishay General Semiconductor
Revision: 24-Feb-16
2
Document Number: 88758
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL UG12HT UG12JT UNIT
Max. instantaneous forward voltage
(1)
I
F
= 12 A T
J
= 25 °C
V
F
1.75
V
I
F
= 12 A T
J
= 125 °C 1.50
Max. reverse current
T
J
= 25 °C
I
R
30 μA
T
J
= 125 °C 4.0 mA
Max. reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
30 ns
I
F
= 1.0 A, dI/dt = 50 A/μs,
V
R
= 30 V, I
rr
= 0.1 I
RM
t
rr
50 ns
Typical softness factor (t
b
/t
a
)
I
F
= 12 A, dI/dt = 240 A/μs,
V
R
= 400 V, I
rr
= 0.1 I
RM
S 0.9 -
Max. reverse recovery current
I
F
= 12 A, dI/dt = 96 A/μs,
V
R
= 400 V, T
C
= 125 °C
I
RM
7.5 A
Peak forward recovery time
I
F
= 12 A, dI/dt = 96 A/μs,
V
F
= 1.1 V x V
F
max.
t
fr
500 ns
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UG12 UGF12 UGB12 UNIT
Typical thermal resistance from junction to case R
JC
1.73 3.04 1.73 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AC UG12JT-E3/45 1.80 45 50/tube Tube
ITO-220AC UGF12JT-E3/45 1.95 45 50/tube Tube
TO-263AB UGB12JT-E3/45 1.33 45 50/tube Tube
TO-263AB UGB12JT-E3/81 1.33 81 800/reel Tape and reel
TO-220AC UG12JTHE3/45
(1)
1.80 45 50/tube Tube
ITO-220AC UGF12JTHE3/45
(1)
1.95 45 50/tube Tube
TO-263AB UGB12JTHE3/45
(1)
1.33 45 50/tube Tube
TO-263AB UGB12JTHE3/81
(1)
1.33 81 800/reel Tape and reel
UG12xT, UGF12xT, UGB12xT
www.vishay.com
Vishay General Semiconductor
Revision: 24-Feb-16
3
Document Number: 88758
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics Per Leg
Fig. 4 - Typical Reverse Leakage Characteristics Per Leg
Fig. 5 - Typical Junction Capacitance Per Leg
Fig. 6 - Reverse Switching Characteristics Per Leg
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
Average Forward Current (A)
Case Temperature (°C)
UG12HT, UG12JT
UGF12HT, UGF12JT
1
10
0
25
50
75
100
125
150
175
200
100
Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
T
J
= 125 °C
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.1 0.3 0.5 0.7 0.9 1.0 1.3 1.5 1.7 1.9 2.1
T
J
= 100 °C
T
J
= 25 °C
0
20
40
60
80
100
1
10
100
1000
10 000
Instantaneous Reverse Leakage
Current (µA)
Percent of Rated Peak Reverse Voltage (%)
T
J
= 100 °C
T
J
= 125 °C
T
J
= 25 °C
1
10
100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
25
50
50
75
100
100
150
200
250
300
350
400
125
0
t
rr
Q
rr
Stored Charge/Reverse Recovery
Time (nC/ns)
12 A, 240 A/µs, 400 V
12 A, 240 A/µs, 400 V
1 A, 50 A/µs, 30 V
1 A, 50 A/µs, 30 V
Junction Temperature (°C)
P1-P3P4-P5

UG12HT-E3/45

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Buy UG12HT-E3/45
Manufacturer:
Vishay
Description:
Rectifiers 500 Volt 12 Amp 30ns 135 Amp IFSM
Lifecycle:
New from this manufacturer.
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