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APT2X101DQ60J

P1-P3P4-P4
APT2x101DQ60J 600V 100A
APT2x100DQ60J 600V 100A
053-4208 Rev H 2-2011
Anti-Parallel Parallel
2
1
323
414
APT2x100DQ60J APT2x101DQ60J
PRODUCT BENEFITS
• Low Losses
• Low Noise Switching
• Cooler Operation
• Higher Reliability Systems
• Increased System Power
Density
PRODUCT FEATURES
• Ultrafast Recovery Times
• Soft Recovery Characteristics
• Popular SOT-227 Package
• Low Forward Voltage
• High Blocking Voltage
• Low Leakage Current
• Avalanche Energy Rated
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
• Snubber Diode
• Uninterruptible Power Supply (UPS)
• Induction Heating
• High Speed Rectifi ers
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
F
I
RM
C
T
UNIT
Volts
µA
pF
MIN TYP MAX
1.6 2.2
2.05
1.28
25
500
190
Characteristic / Test Conditions
Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, V
R
= 200V
I
F
= 100A
I
F
= 200A
I
F
= 100A, T
J
= 125°C
V
R
= 600V
V
R
= 600V, T
J
= 125°C
DUAL DIE ISOTOP
®
PACKAGE
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specifi ed.
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 82°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Avalanche Energy (1A, 40mH)
Operating and StorageTemperature Range
Symbol
V
R
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FSM
E
AVL
T
J
,T
STG
UNIT
Volts
Amps
mJ
°C
APT2x101_100DQ60J
600
100
146
1000
20
-55 to 175
S
O
T
-2
2
7
ISOTOP
®
1
2
3
4
file # E145592
"UL Recognized"
Microsemi Website - http://www.microsemi.com
APT2x101_100DQ60J
DYNAMIC CHARACTERISTICS
053-4208 Rev H 2-2011
MIN TYP MAX
- 34
- 160
- 290
- 5 -
- 220
- 1530
- 13 -
- 100
- 2890
- 44
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 100A, di
F
/dt = -200A/µs
V
R
= 400V, T
C
= 25°C
I
F
= 100A, di
F
/dt = -200A/µs
V
R
= 400V, T
C
= 125°C
I
F
= 100A, di
F
/dt = -1000A/µs
V
R
= 400V, T
C
= 125°C
I
F
= 1A, di
F
/dt = -100A/µs, V
R
= 30V, T
J
= 25°C
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
RMS Voltage
(50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
Package Weight
Maximum Mounting Torque
Symbol
R
θJC
V
Isolation
W
T
Torque
MIN TYP MAX
.42
2500
1.03
29.2
10
1.1
UNIT
°C/W
Volts
oz
g
lb•in
N•m
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
10
-5
10
-4
10
-3
10
-2
0.1 1
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
053-4208 Rev H 2-2011
APT2x101_100DQ60J
TYPICAL PERFORMANCE CURVES
0
0.2
0.4
0.5
0.6
1
1.2
1.4
0 25 50 75 100 125 150
T
J
=125°C
V
R
=400V
50A
100A
200A
Duty cycle = 0.5
T
J
=175°C
1 10 100 200
T
J
, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature
V
R
, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
Q
rr
, REVERSE RECOVERY CHARGE I
F
, FORWARD CURRENT
(nC) (A)
I
RRM
, REVERSE RECOVERY CURRENT t
rr
, REVERSE RECOVERY TIME
(A) (ns)
V
F
, ANODE-TO-CATHODE VOLTAGE (V) -di
F
/dt, CURRENT RATE OF CHANGE(A/µs)
Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change
-di
F
/dt, CURRENT RATE OF CHANGE (A/µs) -di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change
0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
T
J
= 175°C
T
J
=125°C
V
R
=400V
100A
50A
200A
300
250
200
150
100
50
0
4000
3500
3000
2500
2000
1500
1000
500
0
T
J
=125°C
V
R
=400V
200A
100A
50A
300
250
200
150
100
50
0
60
50
40
30
20
10
0
C
J
, JUNCTION CAPACITANCE K
f
, DYNAMIC PARAMETERS
(pF) (Normalized to 1000A/µs)
I
F(AV)
(A)
Q
rr
t
rr
Q
rr
I
RRM
1400
1200
1000
800
600
400
200
0
t
rr
0
20
40
60
80
100
120
140
160
180
25 50 75 100 125 150 175
P1-P3P4-P4

APT2X101DQ60J

Mfr. #:
Buy APT2X101DQ60J
Manufacturer:
Microchip / Microsemi
Description:
Rectifiers FG, FRED, 600V, 60A, SOT-227
Lifecycle:
New from this manufacturer.
Delivery:
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