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MAX5074AUP+T

P1-P3P4-P6P7-P9P10-P12P13-P13
General Description
The MAX5074 isolated PWM power IC features integrated
switching power MOSFETs connected in a voltage-
clamped, two-transistor, power-circuit configuration. This
device can be used in both forward and flyback configu-
rations with a wide input voltage range from 11V to 76V
and up to 15W of output power.
The voltage-clamped power topology enables full
recovery of stored magnetizing and leakage inductive
energy for enhanced efficiency and reliability. A look-
ahead signal for driving secondary-side synchronous
rectifiers can be used to increase efficiency.
A wide array of protection features includes UVLO,
overtemperature shutdown, and short-circuit protection
with hiccup current limit for enhanced performance and
reliability. Operation up to 500kHz allows smaller exter-
nal magnetics and capacitors.
The MAX5074 is rated for operation over the -40°C to
+125°C temperature range and is available in a 20-pin
TSSOP package.
Warning: The MAX5074 is designed to work with
high voltages. Exercise caution.
Applications
IEEE 802.3af PD Power Supplies
Isolated IP Phone Power Supplies
High-Efficiency Telecom/Datacom Power Supplies
48V Input, Isolated Power-Supply Modules
WLAN Access-Point Power Supplies
ADSL Line Cards
ADSL Line-Driver Power Supplies
Distributed Power Systems with 48V Bus
Features
♦ Clamped, Two-Switch Power IC for High Efficiency
♦ No Reset Winding Required
♦ Up to 15W Output Power
♦ Bias Voltage Regulator with Automatic High-
Voltage Supply Turn-Off
♦ 11V to 76V Wide Input Voltage Range
♦ Integrated High-Voltage 0.4Ω Power MOSFETs
♦ Feed-Forward Voltage-Mode Control For Fast
Input Transient Rejection
♦ Programmable Brownout Undervoltage Lockout
♦ Internal Overtemperature Shutdown
♦ Indefinite Short-Circuit Protection With
Programmable Fault Integration
♦ Integrated Look-Ahead Signal for Secondary-Side
Synchronous Rectification
♦ >90% Efficiency with Synchronous Rectification
♦ Up to 500kHz Switching Frequency
♦ High-Power (1.74W), Small-Footprint 20-Pin
Thermally Enhanced TSSOP Package
MAX5074
Power IC with Integrated MOSFETs for Isolated IEEE
802.3af PD and Telecom Power-Supply Applications
________________________________________________________________ Maxim Integrated Products 1
20
19
18
17
16
15
14
13
1
2
3
4
5
6
7
8
INBIAS
HVIN
UVLO
BSTRCFF
FLTINT
RTCT
REGOUT
TOP VIEW
DRNH
XFRMRH
DRVIN
XFRMRLPPWM
CSS
OPTO
RAMP
12
11
9
10
SRC
PGNDCS
GND
MAX5074
TSSOP
Pin Configuration
Ordering Information
MAX5074
DRNH
SRC
DRVL
DRVH
QH
QL
D2
D1
D3
T1
V
IN
C
IN
C
OUT
V
OUT
XFRMRH
XFRMRL
Simplified Application Circuit
19-3312; Rev 0; 7/04
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
*EP = Exposed pad.
EVALUATION KIT AVAILABLE
PART TEMP RANGE PIN-PACKAGE
MAX5074AUP -40°C to +125°C 20-TSSOP-EP*
MAX5074
Power IC with Integrated MOSFETs for Isolated IEEE
802.3af PD and Telecom Power-Supply Applications
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V
HVIN
= 12V, C
INBIAS
= 1µF, C
REGOUT
= 2.2µF, R
RTCT
= 25kΩ, C
RTCT
= 100pF, C
BST
= 0.22µF, V
CSS
= V
CS
= 0V, V
RAMP
= V
UVLO
= 3V,
T
A
= T
J
= -40°C to +125°C, unless otherwise noted. Typical values are at T
A
= +25°C, unless otherwise noted.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
HVIN, INBIAS, DRNH, XFRMRH,
XFRMRL to GND.................................................-0.3V to +80V
BST to GND ............................................................-0.3V to +95V
BST to XFRMRH .....................................................-0.3V to +12V
PGND to GND .......................................................-0.3V to +0.3V
UVLO, RAMP, CSS, OPTO, FLTINT, RCFF,
RTCT to GND......................................................-0.3V to +12V
SRC, CS to GND.......................................................-0.3V to +6V
REGOUT, DRVIN to GND .......................................-0.3V to +12V
REGOUT to HVIN ...................................................-80V to +0.3V
REGOUT to INBIAS ................................................-80V to +0.3V
REGOUT Current ................................................................50mA
PPWM to GND....................................-0.3V to (REGOUT + 0.3V)
PPWM Current .................................................................±20mA
DRNH, XFRMRH, XRFMRL, SRC Continuous Current (Average)
T
J
= +125°C......................................................................0.9A
T
J
= +150°C......................................................................0.6A
Continuous Power Dissipation (T
A
= +70°C)
20-Pin TSSOP-EP (derate 21.7mW/°C above +70°C) ....1.739W
20-Pin TSSOP-EP (θ
JA
) ................................................46°C/W
Operating Temperature Range .........................-40°C to +125°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range .............................-60°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Input Supply Range V
HVIN
11 76 V
OSCILLATOR (RTCT)
PWM Frequency f
S
R
RTCT
= 25kΩ, C
RTCT
= 100pF 256 kHz
Maximum PWM Duty Cycle D
MAX
R
RTCT
= 25kΩ, C
RTCT
= 100pF 47 %
Maximum RTCT Frequency f
RTCTMAX
(Note 2) 1 MHz
RTCT Peak Trip Level V
TH
0.51 x
V
REGOUT
V
RTCT Valley Trip Level
0.04 x
V
REGOUT
V
RTCT Input Bias Current ±1 µA
RTCT Discharge MOSFET
R
DS(ON)
Sinking 20mA 30 60 Ω
RTCT Discharge Pulse Width 50 ns
LOOK-AHEAD LOGIC (PPWM)
PPWM to XFRMRL Output
Propagation Delay
t
PPWM
PPWM rising to XFRMRL falling 110 ns
PPWM Output High V
OH
Sourcing 2mA 7.0 11.0 V
PPWM Output Low V
OL
Sinking 2mA 0.4 V
PWM COMPARATOR (OPTO, RAMP, RCFF)
Common-Mode Range V
CM-PWM
0 5.5 V
Input Offset Voltage 10 mV
Input Bias Current -2 +2 µA
RAMP to XFRMRL Propagation
Delay
From RAMP (50mV overdrive) rising to
XFRMRL rising
100 ns
Minimum OPTO Voltage V
CSS
= 0V, OPTO sinking 2mA 1.47 V
Minimum RCFF Voltage RCFF sinking 2mA 2.18 V
MAX5074
Power IC with Integrated MOSFETs for Isolated IEEE
802.3af PD and Telecom Power-Supply Applications
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(V
HVIN
= 12V, C
INBIAS
= 1µF, C
REGOUT
= 2.2µF, R
RTCT
= 25kΩ, C
RTCT
= 100pF, C
BST
= 0.22µF, V
CSS
= V
CS
= 0V, V
RAMP
= V
UVLO
= 3V,
T
A
= T
J
= -40°C to +125°C, unless otherwise noted. Typical values are at T
A
= +25°C, unless otherwise noted.) (Note 1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
REGOUT LDO (REGOUT)
INBIAS floating, V
HVIN
= 11V to 76V 8.3 9.2
REGOUT Voltage Set Point V
REGOUT
V
INBIAS
= V
HVIN
= 11V to 76V 9.5 11.0
V
INBIAS floating, V
HVIN
= 15V, I
REGOUT
= 0
to 30mA
0.25
REGOUT Load Regulation
V
INBIAS
= V
HVIN
= 15V, I
REGOUT
= 0 to
30mA
0.25
V
INBIAS floating, I
REGOUT
= 30mA 1.25
REGOUT Dropout Voltage
V
INBIAS
= V
HVIN
, I
REGOUT
= 30mA 1.25
V
REGOUT Undervoltage Lockout
Threshold
REGOUT rising 6.6 7.4 V
REGOUT Undervoltage Lockout
Threshold Hysteresis
REGOUT falling 0.7 V
SOFT-START (CSS)
Soft-Start Current I
CSS
33 µA
INTEGRATING FAULT PROTECTION (FLTINT)
FLTINT Source Current I
FLTINT
80 µA
FLTINT Trip Point FLTINT rising 2.7 V
FLTINT Hysteresis 0.8 V
INTERNAL POWER MOSFETs (See Figure 1, QH and QL)
On-Resistance R
DS
(
ON
)
V
DRVIN
= V
BST
= 9V,
V
XFRMRH
= V
SRC
= 0V, I
DS
= 50mA
0.4 0.8 Ω
Off-State Leakage Current -5 +5 µA
Total Gate Charge Per FET 15 nC
HIGH-SIDE DRIVER
Low-to-High Delay
Driver delay until FET V
GS
reaches 0.9 x
(V
BST
- V
XFRMRH
) and is fully on
80 ns
High-to-Low Delay
Driver delay until FET V
GS
reaches 0.1 x
(V
BST
- V
XFRMRH
) and is fully off
40 ns
Driver Output Voltage BST to XFRMRH with high side on 8 V
LOW-SIDE DRIVER
Low-to-High Delay
Driver delay until FET V
GS
reaches 0.9 x
V
DRVIN
and is fully on
80 ns
High-to-Low Delay
Driver delay until FET V
GS
reaches 0.1 x
V
DRVIN
and is fully off
40 ns
CURRENT-LIMIT COMPARATOR (CS)
Current-Limit Threshold Voltage V
ILIM
140 156 172 mV
Current-Limit Input Bias Current I
BILIM
0 < V
CS
< 0.3V -2 +2 µA
P1-P3P4-P6P7-P9P10-P12P13-P13

MAX5074AUP+T

Mfr. #:
Buy MAX5074AUP+T
Manufacturer:
Maxim Integrated
Description:
IC REG IEEE 802.3AF 1OUT 20TSSOP
Lifecycle:
New from this manufacturer.
Delivery:
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