BCR 192L3 E6327

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P16

Aug-29-2003

1

BCR192...

PNP Silicon Digital Transistor

• Switching circuit, inverter, interface circuit,

driver circuit

• Built in bias resistor (R

1

= 22kΩ , R

2

= 47kΩ )

• For 6-PIN packages: two (galvanic) internal

isolated transistors with good matching

in one package

BCR192/F/L3

BCR192T/W

BCR192U

EHA07183

3

21

C

EB

R

1

R

2

EHA07173

6 54

321

C1 B2 E2

C2B1E1

1

R

R

2

R

1

R

2

TR1

TR2

Type Marking Pin Configuration Package

BCR192

BCR192F

BCR192L3

BCR192T

BCR192U

BCR192W

WPs

WPs

WP

WPs

WPs

WPs

1=B

1=B

1=B

1=B

1=E1

1=B

2=E

2=E

2=E

2=E

2=B1

2=E

3=C

3=C

3=C

3=C

3=C2

3=C

-

-

-

-

4=E2

-

-

-

-

-

5=B2

-

-

-

-

-

6=C1

-

SOT23

TSFP-3

TSLP-3-4

SC75

SC74

SOT323

Aug-29-2003

2

BCR192...

Maximum Ratings

Parameter

Symbol Value Unit

Collector-emitter voltage V

CEO

50 V

Collector-base voltage V

CBO

50

Emitter-base voltage V

EBO

50

Input on voltage V

i(on)

30

Collector current I

C

100 mA

Total power dissipation-

BCR192, T

S

≤ 102°C

BCR192F, T

S

≤ 128°C

BCR192L3, T

S

≤ 135°C

BCR192T, T

S

≤ 109°C

BCR192U, T

S

≤ 118°C

BCR192W, T

S

≤ 124°C

P

tot

200

250

250

250

250

250

mW

Junction temperature T

j

150 °C

Storage temperature T

stg

150 ... -65

Thermal Resistance

Parameter

Symbol Value Unit

Junction - soldering point

1)

BCR192

BCR192F

BCR192L3

BCR192T

BCR192U

BCR192W

R

thJS

≤ 240

≤ 90

≤ 60

≤ 165

≤ 133

≤ 105

K/W

1

For calculation of R

thJA

please refer to Application Note Thermal Resistance

Aug-29-2003

3

BCR192...

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

C

= 100 µA, I

B

= 0

V

(BR)CEO

50 - -

V

Collector-base breakdown voltage

I

C

= 10 µA, I

E

= 0

V

(BR)CBO

50 - -

Collector-base cutoff current

V

CB

= 40 V, I

E

= 0

I

CBO

- - 100 nA

Emitter-base cutoff current

V

EB

= 10 V, I

C

= 0

I

EBO

- - 227 µA

DC current gain

1)

I

C

= 5 mA, V

CE

= 5 V

h

FE

70 - - -

Collector-emitter saturation voltage

1)

I

C

= 10 mA, I

B

= 0,5 mA

V

CEsat

- - 0,3 V

Input off voltage

I

C

= 100 µA, V

CE

= 5 V

V

i(off)

0,5 - 1,2

Input on voltage

I

C

= 2 mA, V

CE

= 0,3 V

V

i(on)

0,8 - 2,5

Input resistor R

1

15 22 29 kΩ

Resistor ratio R

1

/R

2

0,42 0,47 0,52 -

AC Characteristics

Transition frequency

I

C

= 10 mA, V

CE

= 5 V, f = 100 MHz

f

T

- 200 - MHz

Collector-base capacitance

V

CB

= 10 V, f = 1 MHz

C

cb

- 3 - pF

1

Pulse test: t < 300µs; D < 2%

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P16

BCR 192L3 E6327

Mfr. #:

Buy BCR 192L3 E6327

Manufacturer:

Infineon Technologies

Description:

TRANS PREBIAS PNP 250MW TSLP-3

Lifecycle:

New from this manufacturer.

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