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HMC-ALH216-SX

P1-P3P4-P6
LOW NOISE AMPLIFIERS - CHIP
1
1 - 126
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
v03.0209
General Description
Features
Functional Diagram
Noise Figure: 2.5 dB @ 20 GHz
Gain: 18 dB
P1dB Output Power: +14 dBm
Supply Voltage: +4V @ 90 mA
Die Size: 2.25 x 1.58 x 0.1 mm
Electrical Speci cations*, T
A
= +25° C, Vdd= +4V
Typical Applications
This HMC-ALH216 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
The HMC-ALH216 is a GaAs MMIC HEMT Wideband
Low Noise Ampli er die which operates between 14
and 27 GHz. The ampli er provides 18 dB of gain,
2.5 dB noise  gure and +14 dBm of output power at
1 dB gain compression while requiring only 90 mA
from a +4V supply voltage. The HMC-ALH216 ampli er
is ideal for integration into Multi-Chip-Modules
(MCMs) due to its small size.
HMC-ALH216
Parameter Min. Typ. Max. Units
Frequency Range 14 - 27 GHz
Gain 14 18 dB
Gain Variation over Temperature 0.02 dB / °C
Noise Figure 2.7 4.5 dB
Input Return Loss 15 dB
Output Return Loss 15 dB
Supply Current (Idd) (Vdd = 4V, Vgg = -0.5 Typ.) 90 mA
*Unless otherwise indicated, all measurements are from probed die
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
1
1 - 127
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH216
v03.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
Noise Figure vs. Frequency
Output Return Loss vs. Frequency
Linear Gain vs. Frequency
Input Return Loss vs. Frequency
16
16.5
17
17.5
18
18.5
19
19.5
20
15 17 19 21 23 25 27
GAIN (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
15 17 19 21 23 25 27
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
15 17 19 21 23 25 27
RETURN LOSS (dB)
FREQUENCY (GHz)
1.8
2
2.2
2.4
2.6
2.8
15 17 19 21 23 25 27
NOISE FIGURE (dB)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
1
1 - 128
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH216
v03.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage +5.5 Vdc
Gate Bias Voltage -1 to +0.3 Vdc
RF Input Power 6 dBm
Channel Temperature 180 °C
Continuous Pdiss (T=85°C)
(derate 14.9 mW/C above 85°C)
1.4 W
Thermal Resistance
(Channel to die bottom)
67 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE
±
.002”
Die Packaging Information
[1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
P1-P3P4-P6

HMC-ALH216-SX

Mfr. #:
Buy HMC-ALH216-SX
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier GaAs HEMT WBand lo Noise amp 14-27 GHz
Lifecycle:
New from this manufacturer.
Delivery:
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