© 2009 IXYS All rights reserved
4 - 5
20090929b
MUBW10-06A6K
IXYS reserves the right to change limits, test conditions and dimensions.
Temperature Sensor NTC
Ratings
Symbol Definitions Conditions min. typ. max. Unit
R
25
B
25/85
resistance
T
C
= 25°C 4.45 4.7
3510
5.0 kW
K
Module
Ratings
Symbol Definitions Conditions min. typ. max. Unit
T
VJ
T
VJM
T
stg
operating temperature
max. virtual junction temperature
storage temperature
-40
-40
150
150
125
°C
°C
°C
V
ISOL
isolation voltage
I
ISOL
<1mA;50/60Hz 2500 V~
M
d
mounting torque
(M4) 2.0 2.2 Nm
d
S
d
A
creep distance on surface
strike distance through air
12.7
9.6
mm
mm
Weight
40 g
Equivalent Circuits for Simulation
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
0
R
0
rectifier diode
D8 - D13 T
VJ
= 125°C 0.90
12
V
mW
V
0
R
0
IGBT
T1 - T6 T
VJ
= 125°C 1.4
150
V
mW
V
0
R
0
free wheeling diode
D1 - D6 T
VJ
= 125°C 1.25
26
V
mW
V
0
R
0
IGBT T7 T
VJ
= 125°C 1.4
150
V
mW
V
0
R
0
free wheeling diode D7 T
VJ
= 125°C 1.25
26
V
mW
T
C
= 25°C unless otherwise stated
Input Rectifier Bridge D8 - D13
Symbol
Definitions Conditions
MaximumRatings
V
RRM
max. repetitive reverse voltage
1600 V
I
FAV
I
DAV M
I
FSM
average forward current
max. average DC output current
max. surge forward current
sine 180° T
C
= 80°C
rectangular; d =
1
/
3
; bridge T
C
= 80°C
t=10ms;sine50Hz T
C
= 25°C
22
61
300
A
A
A
P
tot
total power dissipation
T
C
= 25°C
50
W
Symbol Conditions Characteristic Values
min. typ. max.
V
F
forward voltage
I
F
= 30 A T
VJ
= 25°C
T
VJ
= 125°C
1.1
1.2
1.45 V
V
I
R
reverse current
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= 125°C 0.3
0.01 mA
mA
R
thJC
thermal resistance junction to case
(perdiode) T
VJ
= 25°C 2.1 K/W
R
thCH
thermal resistance case to heatsink
(perdiode) 0.7 K/W
