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MUBW10-06A6

P1-P3P4-P5
© 2009 IXYS All rights reserved
1 - 5
20090929b
MUBW10-06A6K
IXYS reserves the right to change limits, test conditions and dimensions.
Preliminary data
Converter - Brake - Inverter
Module (CBI 1)
NPT IGBT
Three Phase
Rectifier
Brake
Chopper
Three Phase
Inverter
V
RRM
= 1600 V V
CES
= 600 V V
CES
= 600 V
I
DAVM25
= 90 A I
C25
= 12 A I
C25
= 52 A
I
FSM
= 300 A V
CE(sat)
= 2.5 V V
CE(sat)
= 2.5 V
Pin configuration see outlines.
Application:
AC motor drives with
•Inputfromsingleorthreephasegrid
•Threephasesynchronousor
asynchronous motor
•Electricbrakingoperation
Features:
•Highlevelofintegration-onlyone
powersemiconductormodulerequired
forthewholedrive
•InverterwithNPTIGBTs
- low saturation voltage
-positivetemperaturecoefcient
-fastswitching
- short tail current
•Epitaxialfreewheelingdiodeswith
hiperfastandsoftreverserecovery
•Industrystandardpackagewithinsu
latedcopperbaseplateandsoldering
pinsforPCBmounting
•Temperaturesenseincluded
Package:
•ULregistered
•IndustrystandardE1-pack
Part name (Markingonproduct)
MUBW10-06A6K
E72873
© 2009 IXYS All rights reserved
2 - 5
20090929b
MUBW10-06A6K
IXYS reserves the right to change limits, test conditions and dimensions.
Ouput Inverter T1 - T6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
collector emitter voltage
T
VJ
= 25°C to 150°C 600 V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
I
C25
I
C80
collector current
T
C
= 25°C
T
C
= 80°C
11
8
A
A
P
tot
total power dissipation
T
C
= 25°C 50 W
V
CE(sat)
collector emitter saturation voltage
I
C
= 10 A; V
GE
= 15 V T
VJ
= 25°C
T
VJ
= 125°C
2.7
3.1
3.3 V
V
V
GE(th)
gate emitter threshold voltage
I
C
= 0.2 mA; V
GE
= V
CE
T
VJ
= 25°C 4.5 6.5 V
I
CES
collector emitter leakage current
V
CE
= V
CES
; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C 1.0
65 µA
mA
I
GES
gate emitter leakage current
V
CE
= 0 V; V
GE
= ±20 V 120 nA
C
ies
input capacitance
V
CE
= 25 V; V
GE
=0V;f=1MHz 220 pF
Q
G(on)
total gate charge
V
CE
= 300 V; V
GE
= 15 V; I
C
= 6 A 32 nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load T
VJ
= 125°C
V
CE
= 300 V; I
C
= 6 A
V
GE
= ±15 V; R
G
= 54 W
20
10
110
30
0.22
0.26
ns
ns
ns
ns
mJ
mJ
I
CM
reverse bias safe operating area
RBSOA; V
GE
= ±15 V; R
G
= 54 W
L=100µH;
clampedinduct.load
T
VJ
= 125°C
V
CEmax
= V
CES
-L
S
·di/dt
18 A
t
SC
(SCSOA)
short circuit safe operating area
V
CE
= 600 V; V
GE
= ±15 V; T
VJ
= 125°C
R
G
= 54 W; non-repetitive
10 µs
R
thJC
thermal resistance junction to case
(perIGBT) 2.75 K/W
R
thCH
thermal resistance case to heatsink
(perIGBT) 0.95 K/W
Output Inverter D1 - D6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
max. repetitve reverse voltage
T
VJ
= 150°C 600 V
I
F25
I
F80
forward current
T
C
= 25°C
T
C
= 80°C
21
14
A
A
V
F
forward voltage
I
F
= 10 A; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C
2.2
1.6
V
V
I
RM
t
rr
E
rec(off)
max. reverse recovery current
reverse recovery time
reverse recovery energy
V
R
= 100 V
di
F
/dt = -100 A/µs T
VJ
= 100°C
I
F
= 12 A; V
GE
= 0 V
80
tbd
4.4 A
ns
µJ
R
thJC
thermal resistance junction to case
(perdiode) 2.5 K/W
R
thCH
thermal resistance case to heatsink
(perdiode) 0.85 K/W
T
C
= 25°C unless otherwise stated
© 2009 IXYS All rights reserved
3 - 5
20090929b
MUBW10-06A6K
IXYS reserves the right to change limits, test conditions and dimensions.
Brake Chopper T7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
collector emitter voltage
T
VJ
= 25°C to 150°C 600 V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
I
C25
I
C80
collector current
T
C
= 25°C
T
C
= 80°C
11
8
A
A
P
tot
total power dissipation
T
C
= 25°C 50 W
V
CE(sat)
collector emitter saturation voltage
I
C
= 10 A; V
GE
= 15 V T
VJ
= 25°C
T
VJ
= 125°C
2.65
3.1
3.3 V
V
V
GE(th)
gate emitter threshold voltage
I
C
= 0.2 mA; V
GE
= V
CE
T
VJ
= 25°C 4.5 6.5 V
I
CES
collector emitter leakage current
V
CE
= V
CES
; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C 0.7
0.1 mA
mA
I
GES
gate emitter leakage current
V
CE
= 0 V; V
GE
= ±20 V 120 nA
C
ies
input capacitance
V
CE
= 25 V; V
GE
=0V;f=1MHz 220 pF
Q
G(on)
total gate charge
V
CE
= 300 V; V
GE
= 15 V; I
C
= 6 A 32 nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load T
VJ
= 125°C
V
CE
= 300 V; I
C
= 6 A
V
GE
= ±15 V; R
G
= 54 W
20
10
110
30
0.21
0.26
ns
ns
ns
ns
mJ
mJ
I
CM
reverse bias safe operating area
RBSOA; V
GE
= ±15 V; R
G
= 54 W
L=100µH;
clampedinduct.load
T
VJ
= 125°C
V
CEmax
= V
CES
-L
S
·di/dt
18 A
t
SC
(SCSOA)
short circuit safe operating area
V
CE
= 600 V; V
GE
= ±15 V; T
VJ
= 125°C
R
G
= 54 W; non-repetitive
10 µs
R
thJC
thermal resistance junction to case
(perIGBT) 2.75 K/W
R
thCH
thermal resistance case to heatsink
(perIGBT) 0.9 K/W
Brake Chopper D7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
max. repetitive reverse voltage
T
VJ
= 150°C 600 V
I
F25
I
F80
forward current
T
C
= 25°C
T
C
= 80°C
21
14
A
A
V
F
forward voltage
I
F
= 10 A; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C 1.25
2.1 V
V
I
R
reverse current
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= 125°C 0.2
0.06 mA
mA
I
RM
t
rr
max. reverse recovery current
reverse recovery time
V
R
= 100 V; I
F
= 12 A
di
F
/dt = -100 A/µs T
VJ
= 100°C
3.5
80
A
ns
R
thJC
thermal resistance junction to case
(perdiode) 2.5 K/W
R
thCH
thermal resistance case to heatsink
(perdiode) 0.85 K/W
T
C
= 25°C unless otherwise stated
P1-P3P4-P5

MUBW10-06A6

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MODULE IGBT CBI E1
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