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IRFS4115TRL7PP

P1-P3P4-P6P7-P9
IRFS4115-7PPbF
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical C
OSS
Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
0.0 0.5 1.0 1.5 2.0
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
25 50 75 100 125 150 175
T
C
, CaseTemperature (°C)
0
20
40
60
80
100
120
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-60 -40 -20 0 20 40 60 80 100120140160180
T
J
, Temperature ( °C )
140
150
160
170
180
190
V
(
B
R
)
D
S
S
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
(
V
)
Id = 3.5mA
0 20 40 60 80 100 120 140
V
DS,
Drain-to-Source Voltage (V)
0
1
2
3
4
E
n
e
r
g
y
(
μ
J
)
0.1 1 10 100 1000
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100μsec
DC
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
200
400
600
800
1000
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
14A
24A
BOTTOM
63A
IRFS4115-7PPbF
www.irf.com 5
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14. Typical Avalanche Current vs.Pulsewidth
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = DT/ Z
thJC
I
av
=
2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Δ
Tj = 150°C and
Tstart =25°C (Single Pulse)
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
40
80
120
160
200
240
E
A
R
,
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
TOP Single Pulse
BOTTOM 1% Duty Cycle
I
D
= 63A
Ri (°C/W)
τι
(sec)
0.015402 0.00001
0.056989 0.000065
0.180208 0.001377
0.146323 0.010705
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
/
Ri
Ci= τi/Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
IRFS4115-7PPbF
6 www.irf.com
Fig. 17 - Typical Recovery Current vs. di
f
/dt
Fig 16. Threshold Voltage Vs. Temperature
Fig. 19 - Typical Stored Charge vs. di
f
/dtFig. 18 - Typical Recovery Current vs. di
f
/dt
Fig. 20 - Typical Stored Charge vs. di
f
/dt
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 1.0A
I
D
= 1.0mA
I
D
= 250μA
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / μs)
0
10
20
30
40
50
I
R
R
M
-
(
A
)
I
F
= 42A
V
R
= 127V
T
J
= 125°C
T
J
= 25°C
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / μs)
0
10
20
30
40
50
I
R
R
M
-
(
A
)
I
F
= 63A
V
R
= 127V
T
J
= 125°C
T
J
= 25°C
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / μs)
0
400
800
1200
1600
2000
2400
Q
R
R
-
(
n
C
)
I
F
= 63A
V
R
= 127V
T
J
= 125°C
T
J
= 25°C
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / μs)
0
400
800
1200
1600
2000
2400
Q
R
R
-
(
n
C
)
I
F
= 42A
V
R
= 127V
T
J
= 125°C
T
J
= 25°C
P1-P3P4-P6P7-P9

IRFS4115TRL7PP

Mfr. #:
Buy IRFS4115TRL7PP
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 150V 105A 11.8mOhm 73nC Qg
Lifecycle:
New from this manufacturer.
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