DMT6009LSS-13 Datasheet DMT6009LSS-13 | P1-P3

DMT6009LSS

Document number: DS38289 Rev. 1 - 2

1 of 6

www.diodes.com

October 2015

DMT6009LSS

NEW PROD UCT

ADVA N C E INF O RMA TION

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

BV

DSS

R

DS(ON)

max

I

D

max

T

A

= +25°C

60V

9.5mΩ @ V

GS

= 10V

10.8A

12mΩ @ V

GS

= 4.5V

9.6

Description and Applications

This new generation MOSFET is designed to minimize the on-state

resistance (R

DS(ON)

) and yet maintain superior switching performance,

making it ideal for high-efficiency power management applications.

 Power Management Functions

 DC-DC Converters

 Backlighting

Features and Benefits

 100% Unclamped Inductive Switch (UIS) Test in Production

 High Conversion Efficiency

 Low R

DS(ON)

– Ensures On State Losses Are Minimized

 Excellent Q

gd

x R

DS(ON)

Product (FOM)

 Advanced Technology for DC-DC Converters

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Finish - Matte Tin Annealed over Copper Leadframe;

Solderable per MIL-STD-202, Method 208

 Weight: 0.074 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMT6009LSS-13

SO-8

2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

SO-8

Top View

Internal Schematic

Top View

D

S

G

D

S

D

S

G

Equivalent circuit

= Manufacturer’s Marking

T6009LS = Product Type Marking Code

YYWW = Date Code Marking

YY or YY = Year (ex: 15 = 2015)

WW = Week (01 to 53)

1

4

8

5

T6009LS

YY

WW

DMT6009LSS

Document number: DS38289 Rev. 1 - 2

2 of 6

www.diodes.com

October 2015

DMT6009LSS

NEW PROD UCT

ADVA N C E INF O RMA TION

Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

V

DSS

60

V

Gate-Source Voltage

V

GSS

±20

V

Continuous Drain Current (Note 6) V

GS

= 10V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

10.8

8.6

A

t<10s

T

A

= +25°C

T

A

= +70°C

I

D

14.4

11.5

A

Maximum Continuous Body Diode Forward Current (Note 6)

I

S

3

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

I

DM

60

A

Avalanche Current, L = 0.1mH

I

AS

25

A

Avalanche Energy, L = 0.1mH

E

AS

31.5

mJ

Thermal Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

P

D

1.25

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

R



JA

100

°C/W

t<10s

55.5

°C/W

Total Power Dissipation (Note 6)

P

D

1.6

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

R



JA

75

°C/W

t<10s

42

°C/W

Thermal Resistance, Junction to Case (Note 6)

R



JC

12

°C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BV

DSS

60

-

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current

I

DSS

-

1

μA

V

DS

= 48V, V

GS

= 0V

Gate-Source Leakage

I

GSS

-

±100

nA

V

GS

= ±16V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

V

GS(TH)

0.7

-

2

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)

-

7.2

9.5

mΩ

V

GS

= 10V, I

D

= 13.5A

-

9

12

V

GS

= 4.5V, I

D

= 11.5A

Diode Forward Voltage

V

SD

-

0.9

1.2

V

GS

= 0V, I

S

= 20A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

C

iss

-

1,925

-

pF

V

DS

= 30V, V

GS

= 0V,

f = 1MHz

Output Capacitance

C

oss

-

438

-

Reverse Transfer Capacitance

C

rss

-

41

-

Gate Resistance

R

G

-

1.7

-

Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge (V

GS

= 10V)

Q

g

-

33.5

-

nC

V

DS

= 30V, I

D

= 13.5A

Total Gate Charge (V

GS

= 4.5V)

Q

g

-

15.6

-

Gate-Source Charge

Q

gs

-

4.7

-

Gate-Drain Charge

Q

gd

-

5.3

-

Turn-On Delay Time

t

D(ON)

-

4.5

-

ns

V

DD

= 30V, V

GS

= 10V,

R

G

= 6Ω, I

D

= 13.5A

Turn-On Rise Time

t

R

-

8.6

-

Turn-Off Delay Time

t

D(OFF)

-

35.9

-

Turn-Off Fall Time

t

F

-

15.7

-

Body Diode Reverse Recovery Time

t

RR

-

18.2

-

ns

I

F

= 13.5A, di/dt = 400A/μs

Body Diode Reverse Recovery Charge

Q

RR

-

33.1

-

nC

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz. copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

DMT6009LSS

Document number: DS38289 Rev. 1 - 2

3 of 6

www.diodes.com

October 2015

DMT6009LSS

NEW PROD UCT

ADVA N C E INF O RMA TION

0.0

5.0

10.0

15.0

20.0

25.0

30.0

0 0.5 1 1.5 2 2.5 3

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

V

GS

= 3.0V

V

GS

= 4.0V

V

GS

= 10.0V

V

GS

= 4.5V

V

GS

= 3.5V

V

GS

= 2.5V

0

5

10

15

20

25

30

1 1.5 2 2.5 3 3.5 4

I

D

, DRAIN CURRENT (A)

V

GS

, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

-55

o

C

25

o

C

85

o

C

150

o

C

125

o

C

V

DS

= 5V

0.006

0.0065

0.007

0.0075

0.008

0.0085

0.009

0.0095

0.01

2 6 10 14 18 22 26 30

R

DS(ON)

, DRAIN-SOURCE ON-RESISTANCE (Ω)

I

D

, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current and

Gate Voltage

V

GS

= 4.5V

V

GS

= 10V

0

0.02

0.04

0.06

0.08

0.1

0 4 8 12 16 20

R

DS(ON)

, DRAIN-SOURCE ON-RESISTANCE (Ω)

V

GS

, GATE-SOURCE VOLTAGE (V)

Figure 4. Typical Transfer Characteristic

I

D

= 13.5A

0.004

0.005

0.006

0.007

0.008

0.009

0.01

0.011

0.012

0.013

0.014

0 5 10 15 20 25 30

R

DS(ON)

, DRAIN-SOURCE ON-RESISTANCE (Ω)

I

D

, DRAIN CURRENT (A)

Figure 5. Typical On-Resistance vs. Drain Current and

Junction Temperature

V

GS

= 10V

150

o

C

125

o

C

-55

o

C

25

o

C

85

o

C

175

o

C

0.6

0.8

1

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

R

DS(ON)

, DRAIN-SOURCE ON-RESISTANCE

(NORMALIZED)

T

J

, JUNCTION TEMPERATURE (℃)

Figure 6. On-Resistance Variation with Junction

Temperature

V

GS

= 4.5V, I

D

= 11.5A

DMT6009LSS-13

DMT6009LSS-13

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