SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001
PARTMARKING DETAILS – BCX19 - U1
BCX19R - U4
COMPLEMENTARY TYPES - BCX17
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage V
CES
50 V
Collector-Emitter Voltage V
CEO
45 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
1000 mA
Continuous Collector Current I
C
500 mA
Base Current I
B
100 mA
Peak Base Current I
BM
200 mA
Power Dissipation at T
amb
=25°C P
TOT
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off
Current
I
CBO
100
200
nA
µA
V
CB
=20V
V
CB
=20V, T
j
=150°C
Emitter-Base Cut-Off
Current
I
EBO
10
µA
V
EB
=5V
Base-Emitter Voltage V
BE
1.2 V I
C
=500mA, V
CE
=1V*
Collector-Emitter
Saturation Voltage
V
CE(sat)
620 mV I
C
=500mA, I
B
=50mA*
Static Forward Current
Transfer Ratio
h
FE
100
70
40
600
I
C
=100mA, V
CE
=1V
I
C
=300mA, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
Transition Frequency f
T
200 MHz I
C
=10mA, V
CE
=5V
f =35MHz
Output Capacitance C
obo
5.0 pF V
CB
=10V, f =1MHz
*Measured under pulsed conditions.
BCX19
C
B
E
SOT23
TBA
