HEXFET
®
Power MOSFET plus Schottky Diode
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
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Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 1.37mH, R
G
= 50Ω, I
AS
= 18A.
Notes:
DirectFET ISOMETRIC
MX
SQ SX ST MQ
MX
MT MP
Description
The IRF8306MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8306MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF8306MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
l RoHS Compliant Containing No Lead and Halogen Free
l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
2 4 6 8 10 12 14 16 18 20
V
GS,
Gate -to -Source Voltage (V)
0
2
4
6
8
10
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
Ω
)
I
D
= 23A
T
J
= 25°C
T
J
= 125°C
V
DSS
V
GS
R
DS(on)
R
DS(on)
30V max ±20V max
1.8mΩ@ 10V 2.8mΩ@ 4.5V
0 20406080
Q
G
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
V
DS
= 15V
VDS= 6V
I
D
= 18A
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
25nC 6.7nC 3.0nC 29nC 22nC 1.8V
DD
G
S
S
IRF8306MPbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 7, 2014
Form Quantity
IRF8306MTRPbF DirectFET MX Tape and Reel 4800 "TR" suffix
IRF8306MTR1PbF
DirectFET MX Tape and Reel 1000 "TR1" suffix EOL notice # 264
NoteOrderable part number Package Type
Standard Pack
Absolute Maximum Ratings
Parameter Units
V
Drain-to-Source Voltage V
V
Gate-to-Source Voltage
I
@ T
= 25°C Continuous Drain Current, V
@ 10V
I
@ T
= 70°C Continuous Drain Current, V
@ 10V A
I
@ T
= 25°C Continuous Drain Current, V
@ 10V
I
Pulsed Drain Current
E
Single Pulse Avalanc he Energy mJ
I
Avalanche Current A
Max.
18
140
180
±20
30
23
230
18
