NCP1252
www.onsemi.com
4
Table 3. ELECTRICAL CHARATERISTICS
(V
CC
= 15 V, R
T
= 43 kW, C
DRV
= 1 nF. For typical values T
J
= 25°C, for min/max values T
J
= –25°C to +125°C, unless otherwise noted)
Characteristics
Test Condition Symbol Min Typ Max Unit
SUPPLY SECTION AND V
CC
MANAGEMENT
Startup threshold at which driving pulses
are authorized
V
CC
increasing
A, B, C versions
D & E versions
V
CC(on)
9.4
13.1
10
14
10.6
14.9
V
Minimum Operating voltage at which driving pulses
are stopped
V
CC
decreasing V
CC(off)
8.4 9 9.6 V
Hysteresis between V
CC(on)
and V
CC(min)
A, B and C versions
D & E versions
V
CC(HYS)
0.9
4.5
1.0
5.0
−
−
V
Start−up current, controller disabled V
CC
< V
CC(on)
& V
CC
increasing
from zero
I
CC1
− − 100
mA
Internal IC consumption, controller switching F
sw
=100 kHz, DRV = open I
CC2
0.5 1.4 2.2 mA
Internal IC consumption, controller switching F
sw
=100 kHz, C
DRV
= 1 nF I
CC3
2.0 2.7 3.5 mA
CURRENT COMPARATOR
Current Sense Voltage Threshold
V
ILIM
0.92 1 1.08 V
Leading Edge Blanking Duration t
LEB
− 160 − ns
Input Bias Current (Note 3) I
bias
− 0.02 −
mA
Propagation delay From CS detected to gate
turned off
t
ILIM
− 70 150 ns
Internal Ramp Compensation Voltage level @ 25°C (Note 4) V
ramp
3.15 3.5 3.85 V
Internal Ramp Compensation resistance to CS pin @ 25°C (Note 4) R
ramp
− 26.5 −
kW
INTERNAL OSCILLATOR
Oscillator Frequency
R
T
= 43 kW & DRV pin = 47 kW
f
OSC
92 100 108 kHz
Oscillator Frequency
R
T
= 8.5 kW & DRV pin = 47 kW
f
OSC
425 500 550 kHz
Frequency Modulation in percentage of f
OSC
(Note 3) f
jitter
− ±5 − %
Frequency modulation Period (Note 3) T
swing
− 3.33 − ms
Maximum operating frequency (Note 3) f
MAX
500 − − kHz
Maximum duty−cycle – A version DC
maxA
45.6 48 49.6 %
Maximum duty−cycle – B version DC
maxB
76 80 84 %
Maximum duty−cycle – C version DC
maxC
61 65 69 %
Maximum duty−cycle – D & E versions DC
maxD
44.2 45.6 47.2 %
FEEDBACK SECTION
Internal voltage division from FB to CS setpoint
FB
div
− 3 − −
Internal pull−up resistor R
pull−up
− 3.5 −
kW
FB pin maximum current FB pin = GND I
FB
1.5 − − mA
Internal feedback impedance from FB to GND Z
FB
− 40 −
kW
Open loop feedback voltage FB pin = open V
FBOL
− 6.0 − V
Internal Diode forward voltage (Note 3) V
f
− 0.75 − V
DRIVE OUTPUT
DRV Source resistance
R
SRC
− 10 30
W
DRV Sink resistance R
SINK
− 6 19
W
Output voltage rise−time V
CC
= 15 V, C
DRV
= 1 nF,
10 to 90%
t
r
− 26 − ns
3. Guaranteed by design
4. V
ramp
, R
ramp
Guaranteed by design