SI5915BDC-T1-E3 Datasheet SI5915BDC-T1-E3 | P1-P3

Vishay Siliconix

Si5915BDC

Document Number: 70484

S10-0548-Rev. B, 08-Mar-10

www.vishay.com

1

Dual P-Channel 8 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• Low Thermal Resistance

• 40 % Smaller Footprint than TSOP-6

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch or Battery Switch for Portable Devices

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A) Q

g

(Typ.)

- 8

0.070 at V

GS

= - 4.5 V

4

a

5 nC

0.086 at V

GS

= - 2.5 V

4

a

0.145 at V

GS

= - 1.8 V 3.6

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (www.vishay.com/ppg?73257

). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 120 °C/W.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

- 8

V

Gate-Source Voltage

V

GS

± 8

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

- 4

a

A

T

C

= 70 °C - 4

a

T

A

= 25 °C

- 4

a, b, c

T

A

= 70 °C

- 3.2

b, c

Pulsed Drain Current

I

DM

- 10

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

- 4

a

T

A

= 25 °C

- 1.9

b, c

Maximum Power Dissipation

T

C

= 25 °C

P

D

3.1

W

T

C

= 70 °C 2

T

A

= 25 °C

1.7

b, c

T

A

= 70 °C

1.1

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t ≤ 5 s

R

thJA

62 74

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

R

thJF

33 40

1206-8 ChipFET

®

(Dual)

Bottom View

S

1

G

1

S

2

G

2

D

1

D

1

D

2

D

2

1

Marking Code

DG XXX

Lot Traceability

and Date Code

Part #

Code

Ordering Information: Si5915BDC-T1-E3 (Lead (Pb)-free)

Si5915BDC-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

1

G

1

D

1

P-Channel MOSFET

S

2

G

2

D

2

P-Channel MOSFET

www.vishay.com

2

Document Number: 70484

S10-0548-Rev. B, 08-Mar-10

Vishay Siliconix

Si5915BDC

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= - 250 µA

- 8 V

V

DS

Temperature Coefficient ΔV

DS

/T

J

I

D

= - 250 µA

- 8.3

mV/°C

V

GS(th)

Temperature Coefficient ΔV

GS(th)

/T

J

2.1

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 0.45 - 1.0 V

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 8 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 8 V, V

GS

= 0 V

- 1

µA

V

DS

= - 8 V, V

GS

= 0 V, T

J

= 85 °C

- 10

On-State Drain Current

a

I

D(on)

V

DS

≤ 4 V, V

GS

= - 4.5 V - 10 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 4.5 V, I

D

= - 3.3 A

0.058 0.070

Ω

V

GS

= - 2.5 V, I

D

= - 2.7 A

0.086 0.104

V

GS

= - 1.8 V, I

D

= - 0.7 A

0.120 0.145

Forward Transconductance

g

fs

V

DS

= - 4 V, I

D

= - 3.3 A

9ms

Dynamic

b

Input Capacitance

C

iss

V

DS

= - 4 V, V

GS

= 0 V, f = 1 MHz

420

pFOutput Capacitance

C

oss

160

Reverse Transfer Capacitance

C

rss

100

Total Gate Charge

Q

g

V

DS

= - 4 V, V

GS

= - 8 V, I

D

= - 4.1 A

914

nC

V

DS

= - 4 V, V

GS

= - 4.5 V, I

D

= - 4.1 A

57.5

Gate-Source Charge

Q

gs

0.7

Gate-Drain Charge

Q

gd

0.7

Gate Resistance

R

g

f = 1 MHz 7 Ω

Tur n - O n D e l ay Time

t

d(on)

V

DD

= - 4 V, R

L

= 1.2 Ω

I

D

≅ - 3.3 A, V

GEN

= - 4.5 V, R

g

= 1 Ω

12 20

ns

Rise Time

t

r

30 45

Turn-Off DelayTime

t

d(off)

20 30

Fall Time

t

f

715

Tur n - O n D e l ay Time

t

d(on)

V

DD

= - 4 V, R

L

= 1.2 Ω

I

D

≅ - 3.3 A, V

GEN

= - 8 V, R

g

= 1 Ω

510

Rise Time

t

r

12 20

Turn-Off DelayTime

t

d(off)

20 30

Fall Time

t

f

10 15

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

- 4

A

Pulse Diode Forward Current

I

SM

- 10

Body Diode Voltage

V

SD

I

S

= - 3.3 A, V

GS

= 0 V

- 0.8 - 1.2 V

Body Diode Reverse Recovery Time

t

rr

I

F

= - 3.3 A, dI/dt = 100 A/µs,

T

J

= 25 °C

60 90 nC

Body Diode Reverse Recovery Charge

Q

rr

39 60

nsReverse Recovery Fall Time

t

a

20

Reverse Recovery Rise Time

t

b

40

Document Number: 70484

S10-0548-Rev. B, 08-Mar-10

www.vishay.com

3

Vishay Siliconix

Si5915BDC

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Q

g

- Gate Charge

0

2

4

6

8

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

DS

)V( egatloV ecruoS-ot-niarD -

V

GS

= 5 V thru 2.5 V

- Drain Current (A)

I

D

1 V

1.5 V

2 V

0.00

0.05

0.10

0.15

0.20

0.25

0.30

02468 10

I

D

- Drain Current (A)

V

GS

= 2.5 V

- On-Resistance (Ω)R

DS(on)

V

GS

= 4.5 V

V

GS

= 1.8 V

0

2

4

6

8

02468 10

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

V

DS

= 4 V

V

DS

= 6.4 V

I

D

= 4.1 A

Transfer Characteristics Curves vs. Temperature

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

4

5

0.0 0.5 1.0 1.5 2.0

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

T

C

= 25 °C

T

C

= - 55 °C

T

C

= 125 °C

0

200

400

600

800

02468

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

C

iss

C

oss

C

rss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50 - 25 0 25 50 75 100 125 150

T

J

- Junction Temperature (°C)

V

GS

= 1.8 V

(Normalized)

- On-ResistanceR

DS(on)

I

D

= 3.3 A

V

GS

= 2.5 V, 4.5 V

SI5915BDC-T1-E3

SI5915BDC-T1-E3

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