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SI5402DC-T1-E3

P1-P3P4-P5
Vishay Siliconix
Si5402DC
Document Number: 71062
S09-1503-Rev. D, 10-Aug-09
www.vishay.com
1
N-Channel 30 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
30
0.035 at V
GS
= 10 V
± 6.7
0.055 at V
GS
= 4.5 V
± 5.3
1206-8 ChipFE T
®
D
D
D
G
D
D
D
S
1
Bottom View
Marking Code
AA XX
Lot Traceability
and Date Code
Part # Code
Ordering Information:
Si5402DC-T1-E3 (Lead (Pb)-free)
Si5402DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
Notes:
a. Surface mounted on 1" x 1" FR4 board..
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
± 6.7 ± 4.9
A
T
A
= 85 °C
± 4.8 ± 3.5
Pulsed Drain Current
I
DM
± 20
Continuous Source Current (Diode Conduction)
a
I
S
2.1 1.1
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
2.5 1.3
W
T
A
= 85 °C
1.3 0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
b, c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 5 s
R
thJA
40 50
°C/W
Steady State 80 95
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
15 20
www.vishay.com
2
Document Number: 71062
S09-1503-Rev. D, 10-Aug-09
Vishay Siliconix
Si5402DC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
1.0 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V
1
µA
V
DS
= 24 V, V
GS
= 0 V, T
J
= 85 °C
5
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 10 V
20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 4.9 A
0.030 0.035
Ω
V
GS
= 4.5 V, I
D
= 3.9 A
0.045 0.055
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 4.9 A
15 S
Diode Forward Voltage
a
V
SD
I
S
= 1.1 A, V
GS
= 0 V
0.8 1.2 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 4.9 A
13 20
nCGate-Source Charge
Q
gs
1.3
Gate-Drain Charge
Q
gd
3.1
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 15 V, R
L
= 15 Ω
I
D
≅ 1 A, V
GEN
= 10 V, R
g
= 6 Ω
10 15
ns
Rise Time
t
r
10 15
Turn-Off Delay Time
t
d(off)
25 40
Fall Time
t
f
10 15
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.1 A, dI/dt = 100 A/µs
30 60
Output Characteristics
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
= 10 thru 5 V
3 V
V
D
S
- Drain-to-Source Voltage (V)
) A ( t n
e r
r u C
n
i a r D
-
I
D
4 V
Transfer Characteristics
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
)A( tne
r
r
uC
ni
a
r
D
-
I
D
Document Number: 71062
S09-1503-Rev. D, 10-Aug-09
www.vishay.com
3
Vishay Siliconix
Si5402DC
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
(Ω) ecnatsiseR-nO -R
)no(SD
0.00
0.02
0.04
0.06
0.08
0.10
048121620
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 3 6 9 12 15
V
DS
= 15 V
I
D
= 4.9 A
) V ( e g a t l o V e c
r u o S - o t - e t
a G
-
Q
g
- Total Gate Charge (nC)
V
S
G
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
20
10
1
V
SD
- Source-to-Drain Voltage (V)
)
A
(
tn
e
r
r
u
C
ec
r
u
o
S
-
I
S
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
200
400
600
800
1000
1200
0 6 12 18 24 30
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
)Fp( ecnaticapaC - C
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 4.9 A
T
J
- Junction Temperature (°C)
)dezilamroN(
ecnatsiseR-nO
-R
)no(SD
0.00
0.02
0.04
0.06
0.08
0.10
0246810
I
D
= 4.9 A
(Ω) ecnatsiseR
-
n
O
-
R
)no(SD
V
GS
- Gate-to-Source Voltage (V)
P1-P3P4-P5

SI5402DC-T1-E3

Mfr. #:
Buy SI5402DC-T1-E3
Manufacturer:
Vishay
Description:
MOSFET N-CH 30V 4.9A 1206-8
Lifecycle:
New from this manufacturer.
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