R8C/10 Group 5. Electrical Characteristics
Rev.1.60 Jan 27, 2006 page 15 of 25
REJ03B0035-0160
Table 5.3 A/D Conversion Characteristics
Standard
M
i
n
.Typ.M
a
x
.
–R
e
s
o
l
u
t
i
o
n
Bit
V
r
e
f
=
V
C
C
1
0
S
y
m
b
o
lP
a
r
a
m
e
t
e
rM
e
a
s
u
r
i
n
g
c
o
n
d
i
t
i
o
nUnit
LSB
±
3
R
L
A
D
D
E
R
t
C
O
N
V
L
a
d
d
e
r
r
e
s
i
s
t
a
n
c
e
C
o
n
v
e
r
s
i
o
n
t
i
m
e
R
e
f
e
r
e
n
c
e
v
o
l
t
a
g
e
A
n
a
l
o
g
i
n
p
u
t
v
o
l
t
a
g
e
V
V
I
A
V
R
E
F
0
V
C
C
(
4
)
V
ref
NOTES:
1. V
CC
=AV
CC
=2.7 to 5.5V at Topr = -20 to 85 °C / -40 to 85 °C, unless otherwise specified.
2. If f
AD
exceeds 10 MHz, divide the f
AD
and hold A/D operating clock frequency (Ø
AD)
10 MHz or below.
3. If the AVcc is less than 4.2V, divide the f
AD
and hold A/D operating clock frequency (Ø
AD)
f
AD
/2 or below.
4. Hold Vcc=Vref.
øAD=10 MHz, Vref=Vcc=5.0V
V
REF
=V
CC
–
A
b
s
o
l
u
t
e
a
c
c
u
r
a
c
y
–
1
0
b
i
t
m
o
d
e
8 bit mode
ø
A
D
=
1
0
M
H
z
,
V
r
e
f
=
V
c
c
=
5
.
0
V
±
2
L
S
B
1
0
b
i
t
m
o
d
e
8
b
i
t
m
o
d
e
øAD=10 MHz, Vref=Vcc=3.3V
(3)
±
5L
S
B
ø
A
D
=
1
0
M
H
z
,
V
r
e
f
=
V
c
c
=
3
.
3
V
(3
)
±
2L
S
B
1
0 40
kΩ
10 bit mode
8 bit mode
ø
A
D
=
1
0
M
H
z
,
V
r
e
f
=
V
c
c
=
5
.
0
V
ø
A
D
=
1
0
M
H
z
,
V
r
e
f
=
V
c
c
=
5
.
0
V
3
.
3
2
.
8
µs
µs
V
A
/
D
o
p
e
r
a
t
i
n
g
c
l
o
c
k
f
r
e
q
u
e
n
c
y
(2
)
Without sample & hold
With sample & hold
0
.
2
5
10
MHz
1.0
1
0
MHz
Table 5.4
Flash Memory Version Electrical Characteristics
B
y
t
e
p
r
o
g
r
a
m
t
i
m
e
Block erase time
P
r
o
g
r
a
m
,
E
r
a
s
e
v
o
l
t
a
g
e
R
e
a
d
v
o
l
t
a
g
e
5
0
0
.
4
µs
P
a
r
a
m
e
t
e
r
Standard
M
i
n
.T
y
p
.M
a
x
U
n
i
t
N
O
T
E
S
:
1
.
V
C
C
1=
A
V
c
c
=
2
.
7
t
o
5
.
5
V
a
t
T
o
p
r
=
0
t
o
6
0
°
C
,
u
n
l
e
s
s
o
t
h
e
r
w
i
s
e
s
p
e
c
i
f
i
e
d
.
2
.
T
h
e
d
a
t
a
h
o
l
d
t
i
m
e
i
n
c
l
u
d
e
s
t
i
m
e
t
h
a
t
t
h
e
p
o
w
e
r
s
u
p
p
l
y
i
s
o
f
f
o
r
t
h
e
c
l
o
c
k
i
s
n
o
t
s
u
p
p
l
i
e
d
.
Measuring condition
S
y
m
b
o
l
Program, Erase temperature
2.7
2.7
0
400
9
5
.
5
5
.
5
6
0
s
V
V
°C
Time delay from suspend request until erase
suspend
t
d(SR-ES)
P
r
o
g
r
a
m
/
e
r
a
s
e
e
n
d
u
r
a
n
c
e
8
ms
100
t
i
m
e
s
D
a
t
a
h
o
l
d
t
i
m
e
(
2
)
Ambient
temperature=55 °C
20
year
E
r
a
s
e
S
u
s
p
e
n
d
R
e
q
u
e
s
t
I
n
t
e
r
v
a
l
10
ms
Table 5.5
Power Circuit Timing Characteristics
S
y
m
b
o
l
S
t
a
n
d
a
r
d
T
y
p
.
U
n
i
t
Measuring condition
M
i
n
.M
a
x
.
Parameter
2000
N
O
T
E
S
:
1
.
T
h
e
m
e
a
s
u
r
i
n
g
c
o
n
d
i
t
i
o
n
i
s
V
c
c
=
A
V
c
c
=
2
.
7
t
o
5
.
5
V
a
n
d
T
o
p
r
=
2
5
°
C
.
2
.
T
h
i
s
s
h
o
w
s
t
h
e
w
a
i
t
i
n
g
t
i
m
e
u
n
t
i
l
t
h
e
i
n
t
e
r
n
a
l
p
o
w
e
r
s
u
p
p
l
y
g
e
n
e
r
a
t
i
n
g
c
i
r
c
u
i
t
i
s
s
t
a
b
i
l
i
z
e
d
d
u
r
i
n
g
p
o
w
e
r
i
n
g
-
o
n
.
3
.
T
h
i
s
s
h
o
w
s
t
h
e
t
i
m
e
u
n
t
i
l
B
C
L
K
s
t
a
r
t
s
f
r
o
m
t
h
e
i
n
t
e
r
r
u
p
t
a
c
k
n
o
w
l
e
d
g
e
m
e
n
t
t
o
c
a
n
c
e
l
s
t
o
p
m
o
d
e
.
1
5
0
t
d
(
R
-
S
)
S
T
O
P
r
e
l
e
a
s
e
t
i
m
e
(3
)
µ
s
t
d
(
P
-
R
)
T
i
m
e
f
o
r
i
n
t
e
r
n
a
l
p
o
w
e
r
s
u
p
p
l
y
s
t
a
b
i
l
i
z
a
t
i
o
n
d
u
r
i
n
g
p
o
w
e
r
i
n
g
-
o
n
(2
)
µ
s
1
