Electrical Characteristics (T
A
= 25
O
C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 µA 30 V
∆BV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient I
D
= 250 µA, Referenced to 25
o
C 21 mV /
o
C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 1 µA
T
J
= 55°C 10 µA
I
GSSF
Gate - Body Leakage, Forward V
GS
= 20 V, V
DS
= 0 V 100 nA
I
GSSR
Gate - Body Leakage, Reverse V
GS
= -20 V, V
DS
= 0 V -100 nA
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 µA 1 2 3 V
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Temp. Coefficient I
D
= 250 µA, Referenced to 25
o
C -4.5 mV /
o
C
R
DS(ON)
Static Drain-Source On-Resistance V
GS
= 10 V, I
D
= 10 A 0.011 0.0135
Ω
T
J
=125°C 0.018 0.023
V
GS
= 4.5 V, I
D
= 9 A 0.017 0.02
I
D(ON)
On-State Drain Current V
GS
= 10 V, V
DS
= 5 V 50 A
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 10 A 27 S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
1340 pF
C
oss
Output Capacitance 340 pF
C
rss
Reverse Transfer Capacitance 125 pF
SWITCHING CHARACTERISTICS (Note 2)
t
D(on)
Turn - On Delay Time V
DS
= 15 V, I
D
= 1 A 12 22 ns
t
r
Turn - On Rise Time
V
GS
= 10 V , R
GEN
= 6 Ω
13 24 ns
t
D(off)
Turn - Off Delay Time 38 60 ns
t
f
Turn - Off Fall Time 10 18 ns
Q
g
Total Gate Charge V
DS
= 15 V, I
D
= 10 A, 22 31 nC
Q
gs
Gate-Source Charge V
GS
= 10 V 5 nC
Q
gd
Gate-Drain Charge 4 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current 2.1 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 2.1 A
(Note 2) 0.73 1.2 V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is
guaranteed by design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDS4410 Rev.B1
c. 125
O
C/W on a 0.006 in
2
pad
of 2oz copper.
b. 105
O
C/W on a 0.04 in
2
pad of 2oz copper.
a. 50
O
C/W on a 1 in
2
pad
of 2oz copper.
