FCPF250N65S3L1
www.onsemi.com
4
TYPICAL PERFORMANCE CHARACTERISTICS
6
1
10
V
GS
, Gate−Source Voltage (V)
I
D
, Drain Current (A)
3
0
0
0
2
4
6
8
10
I
D
, Drain Current (A)
R
DS(ON)
, Drain−Source
On−Resistance (W)
40
V
SD
, Body Diode Forward Voltage (V)
I
S
, Reverse Drain Current (A)
V
DS
, Drain−Source Voltage (V)
Capacitances (pF)
Q
g
, Total Gate Charge (nC)
V
GS
, Gate−Source Voltage (V)
6
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, Drain−Source Voltage (V)
I
D
, Drain Current (A)
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
20
12 18 24
30
9
10 30
30
0.1
1
10
40
250 ms Pulse Test
T
C
= 25°C
V
GS
= 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
0.2 1 10 20
V
DS
= 20 V
250 ms Pulse Test
25°C
−55°C
150°C
5487
0.0
0.2
0.4
0.6
0.8
T
C
= 25°C
V
GS
= 10 V
V
GS
= 20 V
0.001
0.01
0.1
1
10
100
V
GS
= 0 V
250 ms Pulse Test
25°C
150°C
−55°C
0.0 1.0 1.50.5
10
−1
10
0
10
1
10
2
10
3
10
−1
10
0
10
1
10
2
10
3
10
4
10
5
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
C
oss
V
GS
= 0 V
f = 1 MHz
C
iss
C
rss
I
D
= 6 A
V
DS
= 130 V
V
DS
= 400 V
