Vishay Siliconix
Si4967DY
Document Number: 70813
S09-0867-Rev. D, 18-May-09
www.vishay.com
1
Dual P-Channel 1.8-V (G-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs: 1.8 V Rated
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 12
0.023 at V
GS
= - 4.5 V
- 7.5
0.030 at V
GS
= - 2.5 V
- 6.7
0.045 at V
GS
= - 1.8 V
- 5.4
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4967DY-T1-E3 (Lead (Pb)-free)
Si4967DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
- 12
V
Gate-Source Voltage
V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
a, b
T
A
= 25 °C
I
D
- 7.5
A
T
A
= 70 °C
- 6.1
Pulsed Drain Current
I
DM
- 30
Continuous Source Current (Diode Conduction)
a, b
I
S
- 1.7
Maximum Power Dissipation
a, b
T
A
= 25 °C
P
D
2.0
W
T
A
= 70 °C
1.3
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
62.5
°C/W
Steady State 93